Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation

B. J. Kim; T. Tanikawa; Y. Honda; M. Yamaguchi; N. Sawaki

doi:10.1016/j.physe.2010.02.018

Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation

B. J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Materials Design Division

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.

Original language	English
Pages (from-to)	2575-2578
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/j.physe.2010.02.018
Publication status	Published - 2010 Sep 1

Keywords

GaN
LD
MOVPE
Selective epitaxy
Si substrate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation",

abstract = "InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.",

keywords = "GaN, LD, MOVPE, Selective epitaxy, Si substrate",

author = "Kim, {B. J.} and T. Tanikawa and Y. Honda and M. Yamaguchi and N. Sawaki",

year = "2010",

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day = "1",

doi = "10.1016/j.physe.2010.02.018",

language = "English",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation

AU - Kim, B. J.

AU - Tanikawa, T.

AU - Honda, Y.

AU - Yamaguchi, M.

AU - Sawaki, N.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.

AB - InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.

KW - GaN

KW - LD

KW - MOVPE

KW - Selective epitaxy

KW - Si substrate

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DO - 10.1016/j.physe.2010.02.018

M3 - Article

AN - SCOPUS:77957997372

VL - 42

SP - 2575

EP - 2578

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

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