Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation

B. J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.

Original languageEnglish
Pages (from-to)2575-2578
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number10
DOIs
Publication statusPublished - 2010 Sep 1

Keywords

  • GaN
  • LD
  • MOVPE
  • Selective epitaxy
  • Si substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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