Abstract
InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.
Original language | English |
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Pages (from-to) | 2575-2578 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 42 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2010 Sep |
Keywords
- GaN
- LD
- MOVPE
- Selective epitaxy
- Si substrate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics