@inproceedings{cdd1386b4ed147949cca18ba120da11a,
title = "Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process",
abstract = "Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.",
keywords = "Bio-template, InGaN, Neutral Beam Etching, Singal Quantum Well",
author = "Lee, {Yi Chun} and Akio Higo and Lee, {Chang Yong} and Cedric Thomas and Tomoyuki Tanikawa and Kanako Shojiki and Shigeyuki Kuboya and Ryuji Katayama and Takayuki Kiba and Peichen Yu and Ichiro Yamashita and Akihiro Murayama and Seiji Samukawa",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",
year = "2015",
doi = "10.1109/NANO.2015.7388865",
language = "English",
series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1278--1281",
booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
}