Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

Yi Chun Lee, Akio Higo, Chang Yong Lee, Cedric Thomas, Tomoyuki Tanikawa, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Takayuki Kiba, Peichen Yu, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1278-1281
Number of pages4
ISBN (Electronic)9781467381550
DOIs
Publication statusPublished - 2015
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 2015 Jul 272015 Jul 30

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period15/7/2715/7/30

Keywords

  • Bio-template
  • InGaN
  • Neutral Beam Etching
  • Singal Quantum Well

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process'. Together they form a unique fingerprint.

Cite this