Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

Yi Chun Lee; Akio Higo; Chang Yong Lee; Cedric Thomas; Tomoyuki Tanikawa; Kanako Shojiki; Shigeyuki Kuboya; Ryuji Katayama; Takayuki Kiba; Peichen Yu; Ichiro Yamashita; Akihiro Murayama; Seiji Samukawa

doi:10.1109/NANO.2015.7388865

Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

Yi Chun Lee, Akio Higo, Chang Yong Lee, Cedric Thomas, Tomoyuki Tanikawa, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Takayuki Kiba, Peichen Yu, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1278-1281
Number of pages	4
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388865
Publication status	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015 Jul 27 → 2015 Jul 30

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	15/7/27 → 15/7/30

Keywords

Bio-template
InGaN
Neutral Beam Etching
Singal Quantum Well

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/NANO.2015.7388865

Cite this

Lee, Y. C., Higo, A., Lee, C. Y., Thomas, C., Tanikawa, T., Shojiki, K., Kuboya, S., Katayama, R., Kiba, T., Yu, P., Yamashita, I., Murayama, A., & Samukawa, S. (2015). Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1278-1281). [7388865] (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388865

Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. / Lee, Yi Chun; Higo, Akio; Lee, Chang Yong; Thomas, Cedric; Tanikawa, Tomoyuki; Shojiki, Kanako; Kuboya, Shigeyuki; Katayama, Ryuji; Kiba, Takayuki; Yu, Peichen; Yamashita, Ichiro; Murayama, Akihiro; Samukawa, Seiji.

IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1278-1281 7388865 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, YC, Higo, A, Lee, CY, Thomas, C, Tanikawa, T, Shojiki, K, Kuboya, S, Katayama, R, Kiba, T, Yu, P, Yamashita, I, Murayama, A & Samukawa, S 2015, Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388865, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 1278-1281, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15/7/27. https://doi.org/10.1109/NANO.2015.7388865

Lee YC, Higo A, Lee CY, Thomas C, Tanikawa T, Shojiki K et al. Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1278-1281. 7388865. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). https://doi.org/10.1109/NANO.2015.7388865

Lee, Yi Chun ; Higo, Akio ; Lee, Chang Yong ; Thomas, Cedric ; Tanikawa, Tomoyuki ; Shojiki, Kanako ; Kuboya, Shigeyuki ; Katayama, Ryuji ; Kiba, Takayuki ; Yu, Peichen ; Yamashita, Ichiro ; Murayama, Akihiro ; Samukawa, Seiji. / Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 1278-1281 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

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title = "Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process",

abstract = "Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.",

keywords = "Bio-template, InGaN, Neutral Beam Etching, Singal Quantum Well",

author = "Lee, {Yi Chun} and Akio Higo and Lee, {Chang Yong} and Cedric Thomas and Tomoyuki Tanikawa and Kanako Shojiki and Shigeyuki Kuboya and Ryuji Katayama and Takayuki Kiba and Peichen Yu and Ichiro Yamashita and Akihiro Murayama and Seiji Samukawa",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

year = "2015",

doi = "10.1109/NANO.2015.7388865",

language = "English",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

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AU - Lee, Yi Chun

AU - Higo, Akio

AU - Lee, Chang Yong

AU - Thomas, Cedric

AU - Tanikawa, Tomoyuki

AU - Shojiki, Kanako

AU - Kuboya, Shigeyuki

AU - Katayama, Ryuji

AU - Kiba, Takayuki

AU - Yu, Peichen

AU - Yamashita, Ichiro

AU - Murayama, Akihiro

AU - Samukawa, Seiji

PY - 2015

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N2 - Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

AB - Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

KW - Bio-template

KW - InGaN

KW - Neutral Beam Etching

KW - Singal Quantum Well

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BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

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Y2 - 27 July 2015 through 30 July 2015

ER -

Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

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