Fabrication of InGaAs quantum nanodisks array by using bio-template and top-down etching processes

K. Yoshikawa, A. Higo, C. Y. Lee, Y. Tamura, C. Thomas, T. Kiba, S. Ishii, H. Sodabanlu, Y. Wang, M. Sugiyama, Y. Nakano, I. Yamashita, A. Murayama, S. Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

III-V compound semiconductor quantum dot (QD) optical devices, such as high-power lasers and high-speed modulators, have great potential for the future of telecommunications and quantum cryptographic communication. We developed a top-down method for fabricating InGaAs quantum nanodisks (NDs) arrays by using bio-template and neutral beam etching (NBE) processes. Damage-free InGaAs/GaAs nano-pillar structures were successfully fabricated for the first time. After NBE, InGaAs NDs were embedded in the GaAs barrier layer by metalorganic vapor phase epitaxy. Subsequently, the photoluminescence was measured and the emission originating from the NDs could be directly detected.

Original languageEnglish
Title of host publication14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages211-214
Number of pages4
ISBN (Electronic)9781479956227
DOIs
Publication statusPublished - 2014 Nov 26
Event2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 - Toronto, Canada
Duration: 2014 Aug 182014 Aug 21

Publication series

Name14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014

Other

Other2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
CountryCanada
CityToronto
Period14/8/1814/8/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation
  • Instrumentation

Fingerprint Dive into the research topics of 'Fabrication of InGaAs quantum nanodisks array by using bio-template and top-down etching processes'. Together they form a unique fingerprint.

Cite this