Fabrication of indium iodide X- and gamma-ray detectors

Toshiyuki Onodera, Keitaro Hitomi, Tadayoshi Shoji

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Indium iodide (InI) is a compound semiconductor with a wide band gap. Due to its high atomic number (ZIn : 49 and ZI : 53) and high density (5.31 g/cm3), Inl exhibits high photon stopping power similar to that of CdTe. Since InI has wide band gap energy (2.0 eV), radiation detectors fabricated from InI are expected to realize low-noise operation at and above room temperatures. These physical properties indicate that InI is a very promising material for fabrication of room temperature X- and gamma-ray detectors. In this study, radiation detectors were fabricated from InI crystals. InI materials were purified by the multi-pass zone-refining method up to 80 times. InI crystals were grown by the traveling molten zone (TMZ) method with the zone-purified materials. The resultant InI radiation detectors were evaluated by measuring their electrical property, spectral responses and long-term stability. The resistivity of the Inl detectors were found to be approximately 3 × 109 (Ωcm). The InI detector exhibited a clear peak corresponding to 22 keV X-rays from a 109Cd radioactive source at room temperature. To evaluate the long-term stability of the InI detectors, temporal change of the energy spectra of the detectors was measured for a period of time at 20°C and at -20°C. At 20°C, the InI detectors exhibited some degradation in spectral response. On the other hand, the InI detectors operated stably for more than 32 hours at -20°C.

Original languageEnglish
Article number1710315
Pages (from-to)3055-3059
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume53
Issue number5
DOIs
Publication statusPublished - 2006 Oct

Keywords

  • Crystal growth
  • Gamma-ray spectroscopy
  • Radiation detectors
  • Semiconductor materials

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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