Fabrication of hole resonant tunneling diodes with nanometer order heterostructures of Si/strained Si1-xGex epitaxially grown on Si(100)

Masao Sakuraba, Ryota Ito, Takahiro Seo, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Hole resonant tunneling diodes with Si/strained Si1-x(Ge x heterostructures epitaxially grown on Si(100) were fabricated and improvement of the negative differential conductance characteristics was explored by reducing thickness of Si barriers and Si1-xGex quantum well into a few nanometer order. It was clearly shown that, by reducing the Si barrier thickness down to 2 nm, high peak current density above a few kA/cm2 can be obtained under a peak-to-valley ratio of abcut 2 at 11 K. From the temperature dependence of the peak and valley currents, it is suggested that local introduction of higher Ge fraction effectively suppresses increase of valley current at higher temperatures.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages131-139
Number of pages9
Edition6
DOIs
Publication statusPublished - 2007 Dec 1
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number6
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/707/10/12

ASJC Scopus subject areas

  • Engineering(all)

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