Fabrication of highly conductive Ta-doped SnO2 polycrystalline films on glass using seed-layer technique by pulse laser deposition

Shoichiro Nakao, Naoomi Yamada, Taro Hitosugi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

    Research output: Contribution to journalArticle

    27 Citations (Scopus)

    Abstract

    We discuss the fabrication of highly conductive Ta-doped SnO2 (Sn1 - xTaxO2; TTO) thin films on glass by pulse laser deposition. On the basis of the comparison of X-ray diffraction patterns and resistivity (ρ) values between epitaxial films and polycrystalline films deposited on bare glass, we proposed the use of seed-layers for improving the conductivity of the TTO polycrystalline films. We investigated the use of rutile TiO2 and NbO2 as seed-layers; these are isostructural materials of SnO2, which are expected to promote epitaxial-like growth of the TTO films. The films prepared on the 10-nm-thick seed-layers exhibited preferential growth of the TTO (110) plane. The TTO film with x = 0.05 on rutile TiO2 exhibited ρ = 3.5 × 10- 4 Ω cm, which is similar to those of the epitaxial films grown on Al2O3 (0001).

    Original languageEnglish
    Pages (from-to)3093-3096
    Number of pages4
    JournalThin Solid Films
    Volume518
    Issue number11
    DOIs
    Publication statusPublished - 2010 Mar 31

    Keywords

    • Pulse laser deposition
    • Seed-layer technique
    • Ta-doped SnO
    • Transparent conductive oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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