Abstract
We discuss the fabrication of highly conductive Ta-doped SnO2 (Sn1 - xTaxO2; TTO) thin films on glass by pulse laser deposition. On the basis of the comparison of X-ray diffraction patterns and resistivity (ρ) values between epitaxial films and polycrystalline films deposited on bare glass, we proposed the use of seed-layers for improving the conductivity of the TTO polycrystalline films. We investigated the use of rutile TiO2 and NbO2 as seed-layers; these are isostructural materials of SnO2, which are expected to promote epitaxial-like growth of the TTO films. The films prepared on the 10-nm-thick seed-layers exhibited preferential growth of the TTO (110) plane. The TTO film with x = 0.05 on rutile TiO2 exhibited ρ = 3.5 × 10- 4 Ω cm, which is similar to those of the epitaxial films grown on Al2O3 (0001).
Original language | English |
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Pages (from-to) | 3093-3096 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 518 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2010 Mar 31 |
Keywords
- Pulse laser deposition
- Seed-layer technique
- Ta-doped SnO
- Transparent conductive oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry