Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles

H. T.T. Tran, K. Matsumoto, M. Moriya, H. Shimada, Yasuo Kimura, A. Hirano-Iwata, Y. Mizugaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We fabricated single electron transistors (SETs) by using gold nanoparticles as their islands. With a simple method of the fabrication, characteristics of capacitively- and resistively-coupled SETs (C-SETs and R-SETs) were achieved at 77 K and room temperature.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages131-134
Number of pages4
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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