Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa, N. Usami

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41 Citations (Scopus)


The fabrication of high quality strain-relaxed thin SiGe layers on ion implanted Si substrates was discussed. SiGe layers with thickness of 100 nm were grown on the implanted substrates by solid source molecular beam epitaxy (SSMBE) at 500 °C. X-ray diffraction (XRD) analysis was used to measure the strain relaxation ratio. It was observed that the surface of the SiGe layer was very smooth with a rms roughness of 0.34 nm and relaxation ratio of more than 80%. The film was found to be relaxed by ion-implantation induced defects and confined near the heterointerface that resulted in a dislocation free SiGe surface.

Original languageEnglish
Pages (from-to)2514-2516
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2004 Sep 27
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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