Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

K. Sawano; S. Koh; Y. Shiraki; Y. Ozawa; T. Hattori; J. Yamanaka; K. Suzuki; K. Arimoto; K. Nakagawa; N. Usami

doi:10.1063/1.1794353

Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa, N. Usami

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Abstract

The fabrication of high quality strain-relaxed thin SiGe layers on ion implanted Si substrates was discussed. SiGe layers with thickness of 100 nm were grown on the implanted substrates by solid source molecular beam epitaxy (SSMBE) at 500 °C. X-ray diffraction (XRD) analysis was used to measure the strain relaxation ratio. It was observed that the surface of the SiGe layer was very smooth with a rms roughness of 0.34 nm and relaxation ratio of more than 80%. The film was found to be relaxed by ion-implantation induced defects and confined near the heterointerface that resulted in a dislocation free SiGe surface.

Original language	English
Pages (from-to)	2514-2516
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	13
DOIs	https://doi.org/10.1063/1.1794353
Publication status	Published - 2004 Sep 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1794353

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title = "Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates",

abstract = "The fabrication of high quality strain-relaxed thin SiGe layers on ion implanted Si substrates was discussed. SiGe layers with thickness of 100 nm were grown on the implanted substrates by solid source molecular beam epitaxy (SSMBE) at 500 °C. X-ray diffraction (XRD) analysis was used to measure the strain relaxation ratio. It was observed that the surface of the SiGe layer was very smooth with a rms roughness of 0.34 nm and relaxation ratio of more than 80%. The film was found to be relaxed by ion-implantation induced defects and confined near the heterointerface that resulted in a dislocation free SiGe surface.",

author = "K. Sawano and S. Koh and Y. Shiraki and Y. Ozawa and T. Hattori and J. Yamanaka and K. Suzuki and K. Arimoto and K. Nakagawa and N. Usami",

note = "Funding Information: The authors wish to thank S. Otake for his technical support. This work was supported in part by a Grant-in-Aid for Scientific Research on Priority Area (No. 11232202) from the Ministry of Education, Culture, Sports, Science and Technology.",

year = "2004",

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doi = "10.1063/1.1794353",

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TY - JOUR

T1 - Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

AU - Sawano, K.

AU - Koh, S.

AU - Shiraki, Y.

AU - Ozawa, Y.

AU - Hattori, T.

AU - Yamanaka, J.

AU - Suzuki, K.

AU - Arimoto, K.

AU - Nakagawa, K.

AU - Usami, N.

N1 - Funding Information: The authors wish to thank S. Otake for his technical support. This work was supported in part by a Grant-in-Aid for Scientific Research on Priority Area (No. 11232202) from the Ministry of Education, Culture, Sports, Science and Technology.

PY - 2004/9/27

Y1 - 2004/9/27

N2 - The fabrication of high quality strain-relaxed thin SiGe layers on ion implanted Si substrates was discussed. SiGe layers with thickness of 100 nm were grown on the implanted substrates by solid source molecular beam epitaxy (SSMBE) at 500 °C. X-ray diffraction (XRD) analysis was used to measure the strain relaxation ratio. It was observed that the surface of the SiGe layer was very smooth with a rms roughness of 0.34 nm and relaxation ratio of more than 80%. The film was found to be relaxed by ion-implantation induced defects and confined near the heterointerface that resulted in a dislocation free SiGe surface.

AB - The fabrication of high quality strain-relaxed thin SiGe layers on ion implanted Si substrates was discussed. SiGe layers with thickness of 100 nm were grown on the implanted substrates by solid source molecular beam epitaxy (SSMBE) at 500 °C. X-ray diffraction (XRD) analysis was used to measure the strain relaxation ratio. It was observed that the surface of the SiGe layer was very smooth with a rms roughness of 0.34 nm and relaxation ratio of more than 80%. The film was found to be relaxed by ion-implantation induced defects and confined near the heterointerface that resulted in a dislocation free SiGe surface.

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JF - Applied Physics Letters

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IS - 13

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Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

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