Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa, N. Usami

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    40 Citations (Scopus)

    Abstract

    The fabrication of high quality strain-relaxed thin SiGe layers on ion implanted Si substrates was discussed. SiGe layers with thickness of 100 nm were grown on the implanted substrates by solid source molecular beam epitaxy (SSMBE) at 500 °C. X-ray diffraction (XRD) analysis was used to measure the strain relaxation ratio. It was observed that the surface of the SiGe layer was very smooth with a rms roughness of 0.34 nm and relaxation ratio of more than 80%. The film was found to be relaxed by ion-implantation induced defects and confined near the heterointerface that resulted in a dislocation free SiGe surface.

    Original languageEnglish
    Pages (from-to)2514-2516
    Number of pages3
    JournalApplied Physics Letters
    Volume85
    Issue number13
    DOIs
    Publication statusPublished - 2004 Sep 27

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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