Fabrication of high purity Ti3SiC2 from Ti/Si/C with the aids of Al by spark plasma sintering

Jianfeng Zhang; Lianjun Wang; Wan Jiang; Lidong Chen

doi:10.1016/j.jallcom.2006.07.059

Fabrication of high purity Ti₃SiC₂ from Ti/Si/C with the aids of Al by spark plasma sintering

Jianfeng Zhang, Lianjun Wang, Wan Jiang, Lidong Chen

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Ti/Si/C powders were used to fabricate high purity Ti₃SiC₂ with the aids of Al by spark plasma sintering (SPS). The results showed that the dense Ti₃SiC₂ samples with <2 wt.% TiC could be rapidly synthesized from Ti/Si/C/Al mixtures at 1280 °C for 6-36 min. The sintering temperature and the sintering time was lower and shorter than that by hot isostatic pressing (HIP) or hot pressing (HP) from Ti/Si/C mixtures. The microstructures of Ti₃SiC₂ depend on the sintering temperature and holding times of SPS and can be controlled accordingly. The technological implication of this work is that, with the aids of Al, Ti/Si/C can be suggested to be the powder mixture to synthesize high purity Ti₃SiC₂ in addition to Ti/Si/TiC powder mixture.

Original language	English
Pages (from-to)	203-207
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	437
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2006.07.059
Publication status	Published - 2007 Jun 28

Keywords

High purity
Microstructure
SPS
Titanium silicon carbide

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.jallcom.2006.07.059

Cite this

@article{1f1993776242415a9bf8fae70a929257,

title = "Fabrication of high purity Ti3SiC2 from Ti/Si/C with the aids of Al by spark plasma sintering",

abstract = "Ti/Si/C powders were used to fabricate high purity Ti3SiC2 with the aids of Al by spark plasma sintering (SPS). The results showed that the dense Ti3SiC2 samples with <2 wt.% TiC could be rapidly synthesized from Ti/Si/C/Al mixtures at 1280 °C for 6-36 min. The sintering temperature and the sintering time was lower and shorter than that by hot isostatic pressing (HIP) or hot pressing (HP) from Ti/Si/C mixtures. The microstructures of Ti3SiC2 depend on the sintering temperature and holding times of SPS and can be controlled accordingly. The technological implication of this work is that, with the aids of Al, Ti/Si/C can be suggested to be the powder mixture to synthesize high purity Ti3SiC2 in addition to Ti/Si/TiC powder mixture.",

keywords = "High purity, Microstructure, SPS, Titanium silicon carbide",

author = "Jianfeng Zhang and Lianjun Wang and Wan Jiang and Lidong Chen",

note = "Funding Information: The authors wish to thank the support of the Natural Science Foundation of China (No. 50302012 and 50325208), and the Open Foundation of State Key Laboratory (No. SKL200504SIC).",

year = "2007",

month = jun,

day = "28",

doi = "10.1016/j.jallcom.2006.07.059",

language = "English",

volume = "437",

pages = "203--207",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

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T1 - Fabrication of high purity Ti3SiC2 from Ti/Si/C with the aids of Al by spark plasma sintering

AU - Zhang, Jianfeng

AU - Wang, Lianjun

AU - Jiang, Wan

AU - Chen, Lidong

N1 - Funding Information: The authors wish to thank the support of the Natural Science Foundation of China (No. 50302012 and 50325208), and the Open Foundation of State Key Laboratory (No. SKL200504SIC).

PY - 2007/6/28

Y1 - 2007/6/28

N2 - Ti/Si/C powders were used to fabricate high purity Ti3SiC2 with the aids of Al by spark plasma sintering (SPS). The results showed that the dense Ti3SiC2 samples with <2 wt.% TiC could be rapidly synthesized from Ti/Si/C/Al mixtures at 1280 °C for 6-36 min. The sintering temperature and the sintering time was lower and shorter than that by hot isostatic pressing (HIP) or hot pressing (HP) from Ti/Si/C mixtures. The microstructures of Ti3SiC2 depend on the sintering temperature and holding times of SPS and can be controlled accordingly. The technological implication of this work is that, with the aids of Al, Ti/Si/C can be suggested to be the powder mixture to synthesize high purity Ti3SiC2 in addition to Ti/Si/TiC powder mixture.

AB - Ti/Si/C powders were used to fabricate high purity Ti3SiC2 with the aids of Al by spark plasma sintering (SPS). The results showed that the dense Ti3SiC2 samples with <2 wt.% TiC could be rapidly synthesized from Ti/Si/C/Al mixtures at 1280 °C for 6-36 min. The sintering temperature and the sintering time was lower and shorter than that by hot isostatic pressing (HIP) or hot pressing (HP) from Ti/Si/C mixtures. The microstructures of Ti3SiC2 depend on the sintering temperature and holding times of SPS and can be controlled accordingly. The technological implication of this work is that, with the aids of Al, Ti/Si/C can be suggested to be the powder mixture to synthesize high purity Ti3SiC2 in addition to Ti/Si/TiC powder mixture.

KW - High purity

KW - Microstructure

KW - SPS

KW - Titanium silicon carbide

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