Fabrication of high precision X-ray mask using silicon dry etching

Daiji Noda, Hiroshi Tsujii, Wataru Yashiro, Kazuma Shimada, Tadashi Hattori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have proposed and fabricated the new x-ray mask with accuracy patterns. In order to introduce the ICP etching system, high aspect ratio Si structure having a width of 1.9 μm was obtained. Using additionally Si dry etching in UV lithography process, high precision and rectangular X-ray masks having a resist microstructure of 4.5 μm pitch and 5 μm height has been fabricated. After Si wet etching, Au was electroplating on a groove of the resist microstructure as narrow as 2.7 μm, and successful formed high density and void-free. This study has verified that the new method is suitable for the high precision fabrication of finely and complexly patterned X-ray masks, and is expected to be used in the production of a wide variety of devices that have not yet been put into practice.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages364-365
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Events20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan
Duration: 2007 Nov 52007 Nov 8

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Other

Others20th International Microprocesses and Nanotechnology Conference, MNC 2007
CountryJapan
CityKyoto
Period07/11/507/11/8

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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