Fabrication of high-Ge-fraction strained Si1-xGe x/Si hole resonant tunneling diode using low-temperature Si 2H6 reaction for nanometer-order ultrathin Si barriers

Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Low-temperature Si barrier growth with atomically flat heterointerfaces was investigated in order to improve negative differential conductance (NDC) characteristics of high-Ge-fraction strained Si1-xGe x/Si hole resonant tunneling diode with nanometer-order thick strained Si1-xGex and unstrained Si layers. Especially to suppress the roughness generation at heterointerfaces for higher Ge fraction, Si barriers were deposited using Si2H6 reaction at a lower temperature of 400 °C instead of SiH4 reaction at 500 °C after the Si0.42Ge0.58 growth. NDC characteristics show that difference between peak and valley currents is effectively enhanced at 11-295 K by using Si2H6 at 400 °C, compared with that using SiH4 at 500 °C. Non-thermal leakage current at lower temperatures below 100 K tends to increase with decrease of Si barrier thickness. Additionally, thermionic-emission dominant characteristics at higher temperatures above 100 K suggests a possibility that introduction of larger barrier height (i.e. larger band discontinuity) enhances the NDC at room temperature by suppression of thermionic-emission current.

Original languageEnglish
Pages (from-to)112-115
Number of pages4
JournalSolid-State Electronics
Volume60
Issue number1
DOIs
Publication statusPublished - 2011 Jun

Keywords

  • Chemical vapor deposition (CVD)
  • Epitaxial growth
  • Negative differential conductance
  • Resonant tunneling diode
  • Si
  • Si H
  • Si-based group IV semiconductor heterostructure
  • SiGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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