Fabrication of high-aspect-ratio PZT structure by sol-gel process using SI mold for MEMS transducers

Nan Wang, Shinya Yoshida, Masafumi Kumano, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This paper reports on the fabrication process of high-aspect-ratio PZT (Pb[ZrxTi1-x]O3) structures using nanocomposite sol-gel method for the application to MEMS (Micro Electro-Mechanical Systems) transducers. Deep Si trench coated with a thin Al2O3 film as a Pb-diffusion barrier layer by using atomic layer deposition is utilized as a mold. PZT is filled in the Si trench by using nanocomposite sol-gel method. As a result, dense PZT nanocomposite is successfully filled into the Si trench, and the PZT microstructure is also formed by etching the Si mold. The X-ray diffraction pattern indicates that the PZT structure has pure perovskite phase. The remnant polarization (Pr) and the coercive field (Ec) of a nanocomposite PZT thick film measure 11.7 μC/cm2 and 71.2 kV/cm, respectively.

Original languageEnglish
Pages (from-to)214-218
Number of pages5
JournalYi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument
Volume34
Issue number6 SUPPL.
Publication statusPublished - 2013 Jun 1

Keywords

  • ALD thin film
  • MEMS transducer
  • Nanocomposite PZT

ASJC Scopus subject areas

  • Instrumentation

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