Fabrication of HfO2 thin film on Si substrate by double-pulse excitation PLD

Tomohiro Tabara; Naoki Wakiya; Takanori Kiguchi; Junzo Tanaka; Kazuo Shinozaki

doi:10.4028/0-87849-449-9.129

Fabrication of HfO₂ thin film on Si substrate by double-pulse excitation PLD

Tomohiro Tabara, Naoki Wakiya, Takanori Kiguchi, Junzo Tanaka, Kazuo Shinozaki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Thin films of HfO₂ were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10^-2 and 7.3 × 10 ^-1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.

Original language	English
Pages (from-to)	129-132
Number of pages	4
Journal	Key Engineering Materials
Volume	350
DOIs	https://doi.org/10.4028/0-87849-449-9.129
Publication status	Published - 2007 Jan 1
Externally published	Yes

Keywords

Double pulse laser excitation
Electrical properties
HfO
PLD
Thin film

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-449-9.129

Cite this

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title = "Fabrication of HfO2 thin film on Si substrate by double-pulse excitation PLD",

abstract = "Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10 -1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.",

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T1 - Fabrication of HfO2 thin film on Si substrate by double-pulse excitation PLD

AU - Tabara, Tomohiro

AU - Wakiya, Naoki

AU - Kiguchi, Takanori

AU - Tanaka, Junzo

AU - Shinozaki, Kazuo

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10 -1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.

AB - Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10 -1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.

KW - Double pulse laser excitation

KW - Electrical properties

KW - HfO

KW - PLD

KW - Thin film

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