Abstract
Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10 -1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.
| Original language | English |
|---|---|
| Pages (from-to) | 129-132 |
| Number of pages | 4 |
| Journal | Key Engineering Materials |
| Volume | 350 |
| DOIs | |
| Publication status | Published - 2007 Jan 1 |
| Externally published | Yes |
Keywords
- Double pulse laser excitation
- Electrical properties
- HfO
- PLD
- Thin film
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Tabara, T., Wakiya, N., Kiguchi, T., Tanaka, J., & Shinozaki, K. (2007). Fabrication of HfO2 thin film on Si substrate by double-pulse excitation PLD. Key Engineering Materials, 350, 129-132. https://doi.org/10.4028/0-87849-449-9.129