Abstract
Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10 -1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.
Original language | English |
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Pages (from-to) | 129-132 |
Number of pages | 4 |
Journal | Key Engineering Materials |
Volume | 350 |
DOIs | |
Publication status | Published - 2007 Jan 1 |
Externally published | Yes |
Keywords
- Double pulse laser excitation
- Electrical properties
- HfO
- PLD
- Thin film
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering