Fabrication of HfO2 thin film on Si substrate by double-pulse excitation PLD

Tomohiro Tabara, Naoki Wakiya, Takanori Kiguchi, Junzo Tanaka, Kazuo Shinozaki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10 -1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.

Original languageEnglish
Pages (from-to)129-132
Number of pages4
JournalKey Engineering Materials
Publication statusPublished - 2007 Jan 1
Externally publishedYes


  • Double pulse laser excitation
  • Electrical properties
  • HfO
  • PLD
  • Thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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