We fabricated multilayer graphene directly on SiO 2 by annealing sputtered amorphous carbon with a catalyst-a simple non-chemical vapor deposition method-without the use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure aligned to the Co(111) surface between the Co catalyst and SiO 2 dielectric. In the multilayer graphene, a resistivity of approximately 500 μ Ωcm was obtained, which is one order of magnitude higher than that of highly oriented pyrolytic graphite.
ASJC Scopus subject areas
- Physics and Astronomy(all)