Fabrication of graphene directly on SiO 2 without transfer processes by annealing sputtered amorphous carbon

Motonobu Sato, Manabu Inukai, Eiji Ikenaga, Takayuki Muro, Shuichi Ogawa, Yuji Takakuwa, Haruhisa Nakano, Akio Kawabata, Mizuhisa Nihei, Naoki Yokoyama

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We fabricated multilayer graphene directly on SiO 2 by annealing sputtered amorphous carbon with a catalyst-a simple non-chemical vapor deposition method-without the use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure aligned to the Co(111) surface between the Co catalyst and SiO 2 dielectric. In the multilayer graphene, a resistivity of approximately 500 μ Ωcm was obtained, which is one order of magnitude higher than that of highly oriented pyrolytic graphite.

Original languageEnglish
Article number04DB01
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 2
DOIs
Publication statusPublished - 2012 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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