Fabrication of Ga2O3/Si direct bonding interface for high power device applications

Jianbo Liang; Daiki Takatsuki; Yasuo Shimizu; Masataka Higashiwaki; Yutaka Ohno; Yasuyoshi Nagai; Naoteru Shigekawa

doi:10.1109/LTB-3D53950.2021.9598435

Fabrication of Ga₂O₃/Si direct bonding interface for high power device applications

Jianbo Liang, Daiki Takatsuki, Yasuo Shimizu, Masataka Higashiwaki, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The fabrication of Ga₂O₃(010)/Si(100) and Ga₂O₃(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga₂O₃ and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).

Original language	English
Title of host publication	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	19
Number of pages	1
ISBN (Electronic)	9781665405676
DOIs	https://doi.org/10.1109/LTB-3D53950.2021.9598435
Publication status	Published - 2021 Oct 5
Event	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan Duration: 2021 Oct 5 → 2021 Oct 11

Publication series

Name	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/Territory	Japan
City	Virtual, Online
Period	21/10/5 → 21/10/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LTB-3D53950.2021.9598435

Cite this

Liang, J., Takatsuki, D., Shimizu, Y., Higashiwaki, M., Ohno, Y., Nagai, Y., & Shigekawa, N. (2021). Fabrication of Ga₂O₃/Si direct bonding interface for high power device applications. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 (pp. 19). (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LTB-3D53950.2021.9598435

Fabrication of Ga₂O₃/Si direct bonding interface for high power device applications. / Liang, Jianbo; Takatsuki, Daiki; Shimizu, Yasuo et al.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 19 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liang, J, Takatsuki, D, Shimizu, Y, Higashiwaki, M, Ohno, Y, Nagai, Y & Shigekawa, N 2021, Fabrication of Ga₂O₃/Si direct bonding interface for high power device applications. in 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Institute of Electrical and Electronics Engineers Inc., pp. 19, 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Virtual, Online, Japan, 21/10/5. https://doi.org/10.1109/LTB-3D53950.2021.9598435

Liang J, Takatsuki D, Shimizu Y, Higashiwaki M, Ohno Y, Nagai Y et al. Fabrication of Ga₂O₃/Si direct bonding interface for high power device applications. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 19. (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). doi: 10.1109/LTB-3D53950.2021.9598435

Liang, Jianbo ; Takatsuki, Daiki ; Shimizu, Yasuo et al. / Fabrication of Ga₂O₃/Si direct bonding interface for high power device applications. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 19 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

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abstract = "The fabrication of Ga2O3(010)/Si(100) and Ga2O3(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga2O3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).",

author = "Jianbo Liang and Daiki Takatsuki and Yasuo Shimizu and Masataka Higashiwaki and Yutaka Ohno and Yasuyoshi Nagai and Naoteru Shigekawa",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by JSPS KAKENHI Grant Numbers: 19H02182. The fabrication of the TEM samples was performed at The Oarai Center and at the Laboratory of Alpha-Ray Emitters in IMR under the Inter-University Cooperative Research in IMR of Tohoku University (NO. 20M0030). A part of this work was supported by Kyoto University Nano Technology Hub in the {"}Nanotechnology Platform Project{"} sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Funding Information: This work was supported by JSPS KAKENHI Grant Numbers: 19H02182. The fabrication of the TEM samples was performed at The Oarai Center and at the Laboratory of Alpha-Ray Emitters in IMR under the Inter-University Cooperative Research in IMR of Tohoku University (NO. 20M0030). A part of this work was supported by Kyoto University Nano Technology Hub in the {"}Nanotechnology Platform Project{"} sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: {\textcopyright} 2021 IEEE; 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 ; Conference date: 05-10-2021 Through 11-10-2021",

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N1 - Funding Information: ACKNOWLEDGMENT This work was supported by JSPS KAKENHI Grant Numbers: 19H02182. The fabrication of the TEM samples was performed at The Oarai Center and at the Laboratory of Alpha-Ray Emitters in IMR under the Inter-University Cooperative Research in IMR of Tohoku University (NO. 20M0030). A part of this work was supported by Kyoto University Nano Technology Hub in the "Nanotechnology Platform Project" sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Funding Information: This work was supported by JSPS KAKENHI Grant Numbers: 19H02182. The fabrication of the TEM samples was performed at The Oarai Center and at the Laboratory of Alpha-Ray Emitters in IMR under the Inter-University Cooperative Research in IMR of Tohoku University (NO. 20M0030). A part of this work was supported by Kyoto University Nano Technology Hub in the "Nanotechnology Platform Project" sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: © 2021 IEEE

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N2 - The fabrication of Ga2O3(010)/Si(100) and Ga2O3(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga2O3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).

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