Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications

M. Wakui, H. Sameshima, F. R. Hu, K. Hane

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

GaN membrane structures are fabricated for micro-electro-mechanical systems (MEMS). The combination of GaN and Si semiconductors is promising for future MEMS. However, due to the different material properties, the fabrication of MEMS using GaN semiconductor is still limited. Here, a simple membrane of GaN semiconductor deposited on Si substrate was investigated. The GaN crystal was grown by molecular beam epitaxy and metal organic chemical vapor deposition. The basic properties of the fabricated GaN light emitting diode (LED) were investigated. Etching the Si substrate from the backside, a freestanding GaN LED membrane was fabricated which can be useful for micro total analysis system. From those experimental results, it was shown that the GaN LED membrane was feasible for MEMS applications.

Original languageEnglish
Pages (from-to)109-114
Number of pages6
JournalMicrosystem Technologies
Volume17
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications'. Together they form a unique fingerprint.

Cite this