Fabrication of freestanding membrane GaN light-emitting diode on Si substrate for MEMS applications

T. Tanae, H. Kawaguchi, A. Iwabuchi, Kazuhiro Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Freestanding membrane GaN light emitting diode (LED) was fabricated on Si substrate for MEMS applications. GaN LED layer grown on Si substrate was used for the fabrication. Removing Si substrate by deep reactive ion etching (DRIE), the freestanding membrane structure of GaN LED was generated. In spite of the DRIE, no degradation was observed in the fabricated membrane LED. Using the membrane structure with grating, wavelength selective emission was obtained.

Original languageEnglish
Title of host publication2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
Pages31-32
Number of pages2
DOIs
Publication statusPublished - 2012 Nov 22
Event2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012 - Banff, AB, Canada
Duration: 2012 Aug 62012 Aug 9

Publication series

NameInternational Conference on Optical MEMS and Nanophotonics
ISSN (Print)2160-5033
ISSN (Electronic)2160-5041

Other

Other2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
CountryCanada
CityBanff, AB
Period12/8/612/8/9

Keywords

  • GaN-LED
  • Si DRIE
  • freeestanding membrane

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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