Four-terminal (4T) fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) having symmetric oxide thick (Tox) (Tox1 = Tox2 = 2.5 nm) and asymmetric (Tox1 = 2:5 nm, Tox2 = 4 nm) oxide thick (Tox) gates that can flexibly control threshold voltage (Vth) have been fabricated using a simple gate oxidation process of neutral-beam oxidation (NBO). Flexible V th controllability was found in symmetric Tox 4TFinFETs. Effective Vth controllability while keeping a low subthreshold slope was achieved with asymmetric Tox 4T-FinFETs due to a slightly thicker Vth control gate oxide.
ASJC Scopus subject areas
- Physics and Astronomy(all)