This paper presents a fabrication process of fluxon devices using Nb/AlOx/Nb Josephson junction technologies with a Nb underlayer. Using the present technologies, fluxon devices have an excellent reproducibility of Josephson critical current density within ±21%, resistance values within ±9%, and inductance values within ±9%. In addition, fluxon-antifluxon collision behaviors were demonstrated using a Josephson sampling system as a typical example of fluxon devices.
|Number of pages||8|
|Journal||Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory|
|Publication status||Published - 1993 Dec 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering