Fabrication of flexible TFTs on a heat-resistant transparent polymer using the standard a-Si TFT process above 300°C

T. Hattori, M. Kato, M. Wakagi, T. Yoshida, M. Hatano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A method for fabricating thin-film transistors (TFTs) on flexible substrates using a spin-coated heat-resistant transparent polyimide analog polymer, polybenzoxazole (PBO), was developed. Since this material is heat-resistant up to 350°C, it can withstand the conventional above-300°C a-Si TFT process. With XeCl excimer laser exposure, the PBO layer with a-Si TFTs could be easily separated from the glass substrate without any damage to the TFTs.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
PublisherElectrochemical Society Inc.
Pages39-48
Number of pages10
Edition9
ISBN (Print)9781566776554
DOIs
Publication statusPublished - 2009
Externally publishedYes
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 16

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherThin Film Transistors 9, TFT 9 - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period08/10/1308/10/16

ASJC Scopus subject areas

  • Engineering(all)

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