Fabrication of flexible TFTs on a heat-resistant transparent polymer using the standard a-Si TFT process above 300°C

T. Hattori, M. Kato, M. Wakagi, T. Yoshida, M. Hatano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A method for fabricating thin-film transistors (TFTs) on flexible substrates using a spin-coated heat-resistant transparent polyimide analog polymer, polybenzoxazole (PBO), was developed. Since this material is heat-resistant up to 350°C, it can withstand the conventional above-300°C a-Si TFT process. With XeCl excimer laser exposure, the PBO layer with a-Si TFTs could be easily separated from the glass substrate without any damage to the TFTs.

    Original languageEnglish
    Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
    Pages39-48
    Number of pages10
    Edition9
    DOIs
    Publication statusPublished - 2008
    EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
    Duration: 2008 Oct 132008 Oct 16

    Publication series

    NameECS Transactions
    Number9
    Volume16
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    OtherThin Film Transistors 9, TFT 9 - 214th ECS Meeting
    CountryUnited States
    CityHonolulu, HI
    Period08/10/1308/10/16

    ASJC Scopus subject areas

    • Engineering(all)

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