@inproceedings{4bb18310f28147ba9b3612f192dc8d6f,
title = "Fabrication of flexible TFTs on a heat-resistant transparent polymer using the standard a-Si TFT process above 300°C",
abstract = "A method for fabricating thin-film transistors (TFTs) on flexible substrates using a spin-coated heat-resistant transparent polyimide analog polymer, polybenzoxazole (PBO), was developed. Since this material is heat-resistant up to 350°C, it can withstand the conventional above-300°C a-Si TFT process. With XeCl excimer laser exposure, the PBO layer with a-Si TFTs could be easily separated from the glass substrate without any damage to the TFTs.",
author = "T. Hattori and M. Kato and M. Wakagi and T. Yoshida and M. Hatano",
year = "2009",
doi = "10.1149/1.2980529",
language = "English",
isbn = "9781566776554",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "9",
pages = "39--48",
booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",
edition = "9",
note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",
}