TY - GEN
T1 - Fabrication of flexible TFTs on a heat-resistant transparent polymer using the standard a-Si TFT process above 300°C
AU - Hattori, T.
AU - Kato, M.
AU - Wakagi, M.
AU - Yoshida, T.
AU - Hatano, M.
PY - 2008
Y1 - 2008
N2 - A method for fabricating thin-film transistors (TFTs) on flexible substrates using a spin-coated heat-resistant transparent polyimide analog polymer, polybenzoxazole (PBO), was developed. Since this material is heat-resistant up to 350°C, it can withstand the conventional above-300°C a-Si TFT process. With XeCl excimer laser exposure, the PBO layer with a-Si TFTs could be easily separated from the glass substrate without any damage to the TFTs.
AB - A method for fabricating thin-film transistors (TFTs) on flexible substrates using a spin-coated heat-resistant transparent polyimide analog polymer, polybenzoxazole (PBO), was developed. Since this material is heat-resistant up to 350°C, it can withstand the conventional above-300°C a-Si TFT process. With XeCl excimer laser exposure, the PBO layer with a-Si TFTs could be easily separated from the glass substrate without any damage to the TFTs.
UR - http://www.scopus.com/inward/record.url?scp=63149127556&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63149127556&partnerID=8YFLogxK
U2 - 10.1149/1.2980529
DO - 10.1149/1.2980529
M3 - Conference contribution
AN - SCOPUS:63149127556
SN - 9781566776554
T3 - ECS Transactions
SP - 39
EP - 48
BT - ECS Transactions - Thin Film Transistors 9, TFT 9
T2 - Thin Film Transistors 9, TFT 9 - 214th ECS Meeting
Y2 - 13 October 2008 through 16 October 2008
ER -