Fabrication of FinFETs by damage-free neutral-beam etching technology

Kazuhiko Endo; Shuichi Noda; Meishoku Masahara; Tomohiro Kubota; Takuya Ozaki; Seiji Samukawa; Yongxun Liu; Kenichi Ishii; Yuki Ishikawa; Etsuro Sugimata; Takashi Matsukawa; Hidenori Takashima; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1109/TED.2006.877035

Fabrication of FinFETs by damage-free neutral-beam etching technology

Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, Tomohiro Kubota, Takuya Ozaki, Seiji Samukawa, Yongxun Liu, Kenichi Ishii, Yuki Ishikawa, Etsuro Sugimata, Takashi Matsukawa, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility) than that obtained by using a conventional reactive-ion etching. The improved mobility is well explained by the NB-etched atomically flat surface. These results strongly support the effectiveness of the NB technology for nanoscale CMOS fabrication.

Original language	English
Pages (from-to)	1826-1833
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	8
DOIs	https://doi.org/10.1109/TED.2006.877035
Publication status	Published - 2006 Aug

Keywords

Carrier mobility
Damaged-free
Double-gate MOSFET (DG-MOSFET)
Neutral beam (NB)
Utrathin-channel fabrication

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Fabrication of FinFETs by damage-free neutral-beam etching technology. / Endo, Kazuhiko; Noda, Shuichi; Masahara, Meishoku; Kubota, Tomohiro; Ozaki, Takuya; Samukawa, Seiji; Liu, Yongxun; Ishii, Kenichi; Ishikawa, Yuki; Sugimata, Etsuro; Matsukawa, Takashi; Takashima, Hidenori; Yamauchi, Hiromi; Suzuki, Eiichi.

In: IEEE Transactions on Electron Devices, Vol. 53, No. 8, 08.2006, p. 1826-1833.

Research output: Contribution to journal › Article › peer-review

Endo, Kazuhiko ; Noda, Shuichi ; Masahara, Meishoku ; Kubota, Tomohiro ; Ozaki, Takuya ; Samukawa, Seiji ; Liu, Yongxun ; Ishii, Kenichi ; Ishikawa, Yuki ; Sugimata, Etsuro ; Matsukawa, Takashi ; Takashima, Hidenori ; Yamauchi, Hiromi ; Suzuki, Eiichi. / Fabrication of FinFETs by damage-free neutral-beam etching technology. In: IEEE Transactions on Electron Devices. 2006 ; Vol. 53, No. 8. pp. 1826-1833.

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abstract = "A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility) than that obtained by using a conventional reactive-ion etching. The improved mobility is well explained by the NB-etched atomically flat surface. These results strongly support the effectiveness of the NB technology for nanoscale CMOS fabrication.",

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AU - Ozaki, Takuya

AU - Samukawa, Seiji

AU - Liu, Yongxun

AU - Ishii, Kenichi

AU - Ishikawa, Yuki

AU - Sugimata, Etsuro

AU - Matsukawa, Takashi

AU - Takashima, Hidenori

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

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