Fabrication of ferromagnetic single-electron tunneling devices by utilizing metallic nanowire as hard mask stencil

T. Niizeki, H. Kubota, Y. Ando, T. Miyazaki

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The stacked magnetic tunnel junctions (MTJs) are microfabricated into ferromagnetic single-electron tunneling devices (F-SETs) by using electron-beam lithography. The F-SETs have a couple of small MTJs (30×500 nm2 -0.1×100 μ m2), which are connected via a metallic nanowire. The large tunnel magnetoresistance ratio as much as 40% (at RT) and small junction area dependence of the RA (resistance×area) are obtained. The electrostatic energy of F-SETs estimated from the minimum junction area corresponds to the temperature of 1 K, which is high enough to observe Coulomb blockade phenomena in a dilution refrigerator.

Original languageEnglish
Article number10C909
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - 2005 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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