Fabrication of FBAR for GHz band pass filter with AlN film grown using MOCVD

Y. Aota, Y. Sakyu, S. Tanifuji, H. Oguma, S. Kameda, H. Nakase, T. Takagi, K. Tsubouchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Film bulk acoustic resonator (FBAR) using AlN film was fabricated. Metal-organic chemical vapor deposition (MOCVD) was used to obtain high oriented AlN(0002) film. The unloaded Q factor (Qr) of fabricated FBAR was improved by reduction of Mo electrode resistance and optimization of cavity etching process. Since Mo nitridation degraded Mo resistance, reaction time between Mo and NH3 became shorter than conventional process to suppress the nitridation during AlN deposition. As a result, Mo resistance was improved to be 12.3 μΩcm from 26.4 μΩcm. In conventional process using Bosch process to fabricate cavities, insufficient etching selection ratio between Si/SiO2 of 200 brought incomplete structure of cavities. The etching selection ratio between Si/SiO2 was improved to be 650 by change of the etching process. The evaluated Qr of the fabricated FBAR was as high as 1557 at 3.698 GHz. We achieved the high Q r value FBAR using high oriented AlN(0002) film by the MOCVD method.

Original languageEnglish
Title of host publication2006 IEEE International Ultrasonics Symposium, IUS
Pages337-340
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE International Ultrasonics Symposium, IUS - Vancouver, BC, Canada
Duration: 2006 Oct 32006 Oct 6

Publication series

NameProceedings - IEEE Ultrasonics Symposium
Volume1
ISSN (Print)1051-0117

Other

Other2006 IEEE International Ultrasonics Symposium, IUS
CountryCanada
CityVancouver, BC
Period06/10/306/10/6

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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