Fabrication of FBAR for GHz band pass filter with AlN film grown using MOCVD

Y. Aota; Y. Sakyu; S. Tanifuji; H. Oguma; Suguru Kameda; H. Nakase; T. Takagi; K. Tsubouchi

doi:10.1109/ULTSYM.2006.103

Fabrication of FBAR for GHz band pass filter with AlN film grown using MOCVD

Y. Aota, Y. Sakyu, S. Tanifuji, H. Oguma, Suguru Kameda, H. Nakase, T. Takagi, K. Tsubouchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

Film bulk acoustic resonator (FBAR) using AlN film was fabricated. Metal-organic chemical vapor deposition (MOCVD) was used to obtain high oriented AlN(0002) film. The unloaded Q factor (Q_r) of fabricated FBAR was improved by reduction of Mo electrode resistance and optimization of cavity etching process. Since Mo nitridation degraded Mo resistance, reaction time between Mo and NH₃ became shorter than conventional process to suppress the nitridation during AlN deposition. As a result, Mo resistance was improved to be 12.3 μΩcm from 26.4 μΩcm. In conventional process using Bosch process to fabricate cavities, insufficient etching selection ratio between Si/SiO₂ of 200 brought incomplete structure of cavities. The etching selection ratio between Si/SiO₂ was improved to be 650 by change of the etching process. The evaluated Q_r of the fabricated FBAR was as high as 1557 at 3.698 GHz. We achieved the high Q _r value FBAR using high oriented AlN(0002) film by the MOCVD method.

Original language	English
Title of host publication	2006 IEEE International Ultrasonics Symposium, IUS
Pages	337-340
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2006.103
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	2006 IEEE International Ultrasonics Symposium, IUS - Vancouver, BC, Canada Duration: 2006 Oct 3 → 2006 Oct 6

Publication series

Name	Proceedings - IEEE Ultrasonics Symposium
Volume	1
ISSN (Print)	1051-0117

Other

Other	2006 IEEE International Ultrasonics Symposium, IUS
Country/Territory	Canada
City	Vancouver, BC
Period	06/10/3 → 06/10/6

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/ULTSYM.2006.103

Cite this

Fabrication of FBAR for GHz band pass filter with AlN film grown using MOCVD. / Aota, Y.; Sakyu, Y.; Tanifuji, S.; Oguma, H.; Kameda, Suguru; Nakase, H.; Takagi, T.; Tsubouchi, K.

2006 IEEE International Ultrasonics Symposium, IUS. 2006. p. 337-340 4151959 (Proceedings - IEEE Ultrasonics Symposium; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Aota, Y, Sakyu, Y, Tanifuji, S, Oguma, H, Kameda, S, Nakase, H, Takagi, T & Tsubouchi, K 2006, Fabrication of FBAR for GHz band pass filter with AlN film grown using MOCVD. in 2006 IEEE International Ultrasonics Symposium, IUS., 4151959, Proceedings - IEEE Ultrasonics Symposium, vol. 1, pp. 337-340, 2006 IEEE International Ultrasonics Symposium, IUS, Vancouver, BC, Canada, 06/10/3. https://doi.org/10.1109/ULTSYM.2006.103

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title = "Fabrication of FBAR for GHz band pass filter with AlN film grown using MOCVD",

abstract = "Film bulk acoustic resonator (FBAR) using AlN film was fabricated. Metal-organic chemical vapor deposition (MOCVD) was used to obtain high oriented AlN(0002) film. The unloaded Q factor (Qr) of fabricated FBAR was improved by reduction of Mo electrode resistance and optimization of cavity etching process. Since Mo nitridation degraded Mo resistance, reaction time between Mo and NH3 became shorter than conventional process to suppress the nitridation during AlN deposition. As a result, Mo resistance was improved to be 12.3 μΩcm from 26.4 μΩcm. In conventional process using Bosch process to fabricate cavities, insufficient etching selection ratio between Si/SiO2 of 200 brought incomplete structure of cavities. The etching selection ratio between Si/SiO2 was improved to be 650 by change of the etching process. The evaluated Qr of the fabricated FBAR was as high as 1557 at 3.698 GHz. We achieved the high Q r value FBAR using high oriented AlN(0002) film by the MOCVD method.",

author = "Y. Aota and Y. Sakyu and S. Tanifuji and H. Oguma and Suguru Kameda and H. Nakase and T. Takagi and K. Tsubouchi",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/ULTSYM.2006.103",

language = "English",

isbn = "1424402018",

series = "Proceedings - IEEE Ultrasonics Symposium",

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AU - Aota, Y.

AU - Sakyu, Y.

AU - Tanifuji, S.

AU - Oguma, H.

AU - Kameda, Suguru

AU - Nakase, H.

AU - Takagi, T.

AU - Tsubouchi, K.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Film bulk acoustic resonator (FBAR) using AlN film was fabricated. Metal-organic chemical vapor deposition (MOCVD) was used to obtain high oriented AlN(0002) film. The unloaded Q factor (Qr) of fabricated FBAR was improved by reduction of Mo electrode resistance and optimization of cavity etching process. Since Mo nitridation degraded Mo resistance, reaction time between Mo and NH3 became shorter than conventional process to suppress the nitridation during AlN deposition. As a result, Mo resistance was improved to be 12.3 μΩcm from 26.4 μΩcm. In conventional process using Bosch process to fabricate cavities, insufficient etching selection ratio between Si/SiO2 of 200 brought incomplete structure of cavities. The etching selection ratio between Si/SiO2 was improved to be 650 by change of the etching process. The evaluated Qr of the fabricated FBAR was as high as 1557 at 3.698 GHz. We achieved the high Q r value FBAR using high oriented AlN(0002) film by the MOCVD method.

AB - Film bulk acoustic resonator (FBAR) using AlN film was fabricated. Metal-organic chemical vapor deposition (MOCVD) was used to obtain high oriented AlN(0002) film. The unloaded Q factor (Qr) of fabricated FBAR was improved by reduction of Mo electrode resistance and optimization of cavity etching process. Since Mo nitridation degraded Mo resistance, reaction time between Mo and NH3 became shorter than conventional process to suppress the nitridation during AlN deposition. As a result, Mo resistance was improved to be 12.3 μΩcm from 26.4 μΩcm. In conventional process using Bosch process to fabricate cavities, insufficient etching selection ratio between Si/SiO2 of 200 brought incomplete structure of cavities. The etching selection ratio between Si/SiO2 was improved to be 650 by change of the etching process. The evaluated Qr of the fabricated FBAR was as high as 1557 at 3.698 GHz. We achieved the high Q r value FBAR using high oriented AlN(0002) film by the MOCVD method.

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Fabrication of FBAR for GHz band pass filter with AlN film grown using MOCVD

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