Fabrication of electronic conductive silicon nitride ceramics by convenient powder metallurgical process

Yoon Ho Kim; Tohru Sekino; Hirokazu Kawaoka; Rak Joo Sung; Takafumi Kusunose; Tadachika Nakayama; Koichi Niihara

Fabrication of electronic conductive silicon nitride ceramics by convenient powder metallurgical process

Yoon Ho Kim, Tohru Sekino, Hirokazu Kawaoka, Rak Joo Sung, Takafumi Kusunose, Tadachika Nakayama, Koichi Niihara

Institute of Multidisciplinary Research for Advanced Materials (IMRAM)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Si₃N₄ ceramics with V₂O₅ based glasses as sintering additives were successfully fabricated by a powder mixing process and rapid sintering by the PECS method. The fabricated materials by Pulsed Electric Current Sintering (PECS) exhibited very fine microstructure with a and β grains. Electric conductivity for the Si₃N ₄/(V₂O₅-B₂O₃) and the Si₃N₄/(V₂O₅-B₂O ₃-Al₂O₃) at room temperature were four and six orders of magnitude higher at room temperature, and two and three orders of magnitude higher at 1000°C than the conventional Si₃N₄ respectively.

Original language	English
Pages (from-to)	645-648
Number of pages	4
Journal	Key Engineering Materials
Volume	317-318
Publication status	Published - 2006 Jan 1

Keywords

Electrical conductivity
Glassy grain boundary phase
Powder metallurgical process
Silicon nitride
VO-based glass

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "Si3N4 ceramics with V2O5 based glasses as sintering additives were successfully fabricated by a powder mixing process and rapid sintering by the PECS method. The fabricated materials by Pulsed Electric Current Sintering (PECS) exhibited very fine microstructure with a and β grains. Electric conductivity for the Si3N 4/(V2O5-B2O3) and the Si3N4/(V2O5-B2O 3-Al2O3) at room temperature were four and six orders of magnitude higher at room temperature, and two and three orders of magnitude higher at 1000°C than the conventional Si3N4 respectively.",

keywords = "Electrical conductivity, Glassy grain boundary phase, Powder metallurgical process, Silicon nitride, VO-based glass",

author = "Kim, {Yoon Ho} and Tohru Sekino and Hirokazu Kawaoka and Sung, {Rak Joo} and Takafumi Kusunose and Tadachika Nakayama and Koichi Niihara",

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T1 - Fabrication of electronic conductive silicon nitride ceramics by convenient powder metallurgical process

AU - Kim, Yoon Ho

AU - Sekino, Tohru

AU - Kawaoka, Hirokazu

AU - Sung, Rak Joo

AU - Kusunose, Takafumi

AU - Nakayama, Tadachika

AU - Niihara, Koichi

PY - 2006/1/1

Y1 - 2006/1/1

N2 - Si3N4 ceramics with V2O5 based glasses as sintering additives were successfully fabricated by a powder mixing process and rapid sintering by the PECS method. The fabricated materials by Pulsed Electric Current Sintering (PECS) exhibited very fine microstructure with a and β grains. Electric conductivity for the Si3N 4/(V2O5-B2O3) and the Si3N4/(V2O5-B2O 3-Al2O3) at room temperature were four and six orders of magnitude higher at room temperature, and two and three orders of magnitude higher at 1000°C than the conventional Si3N4 respectively.

AB - Si3N4 ceramics with V2O5 based glasses as sintering additives were successfully fabricated by a powder mixing process and rapid sintering by the PECS method. The fabricated materials by Pulsed Electric Current Sintering (PECS) exhibited very fine microstructure with a and β grains. Electric conductivity for the Si3N 4/(V2O5-B2O3) and the Si3N4/(V2O5-B2O 3-Al2O3) at room temperature were four and six orders of magnitude higher at room temperature, and two and three orders of magnitude higher at 1000°C than the conventional Si3N4 respectively.

KW - Electrical conductivity

KW - Glassy grain boundary phase

KW - Powder metallurgical process

KW - Silicon nitride

KW - VO-based glass

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Fabrication of electronic conductive silicon nitride ceramics by convenient powder metallurgical process

Abstract

Keywords

ASJC Scopus subject areas

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