Abstract
Printed organic thin-film transistors (OTFTs) for use as a switching device in an organic light-emitting diode (OLED) were fabricated by microcontact and direct printing at room temperature. The printed OTFT was used in the fabrication of a printed gate with source and drain electrodes (W/L = 500 μm/5 μm, 500 μm/10 μm, and 500 μm/20 μm) printed using a hard poly (dimethylsiloxane) (h-PDMS) stamp and low-viscosity Ag ink, a spin coated parylene-C gate dielectric, and a soluble poly (3-hexylthiophene-2,5-dily) (P3HT) organic semiconductor on flexible, transparent poly(ethylenenaphthalate) (PEN) plastic substrates. The printed OTFT was characterized and the following parameters were obtained: a mobility of 0.06 (±0.02) cm2/Vs, an on/off current ratio of 103, and a subthreshold slope of 2.53 V/decade. Also, it was possible to fabricate a printed OTFT with channel lengths down to 5 μm, and reduce the fabrication process by 20 steps compared with photolithography.
| Original language | English |
|---|---|
| Pages (from-to) | 487-496 |
| Number of pages | 10 |
| Journal | Sensors and Materials |
| Volume | 19 |
| Issue number | 8 |
| Publication status | Published - 2007 Dec 1 |
Keywords
- Direct printing
- Microcontact printing
- Organic thin-film transistor
- Printed OTFT
- h-PDMS stamp
ASJC Scopus subject areas
- Instrumentation
- Materials Science(all)