Fabrication of direct-printed OTFT array using flexible h-PDMS stamp

Jeongdai Jo; Taik Min Lee; Jong Su Yu; Chung Hwan Kim; Dong Soo Kim; Eung Sug Lee; Masayoshi Esashi

Fabrication of direct-printed OTFT array using flexible h-PDMS stamp

Jeongdai Jo, Taik Min Lee, Jong Su Yu, Chung Hwan Kim, Dong Soo Kim, Eung Sug Lee, Masayoshi Esashi

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Printed organic thin-film transistors (OTFTs) for use as a switching device in an organic light-emitting diode (OLED) were fabricated by microcontact and direct printing at room temperature. The printed OTFT was used in the fabrication of a printed gate with source and drain electrodes (W/L = 500 μm/5 μm, 500 μm/10 μm, and 500 μm/20 μm) printed using a hard poly (dimethylsiloxane) (h-PDMS) stamp and low-viscosity Ag ink, a spin coated parylene-C gate dielectric, and a soluble poly (3-hexylthiophene-2,5-dily) (P3HT) organic semiconductor on flexible, transparent poly(ethylenenaphthalate) (PEN) plastic substrates. The printed OTFT was characterized and the following parameters were obtained: a mobility of 0.06 (±0.02) cm²/Vs, an on/off current ratio of 10³, and a subthreshold slope of 2.53 V/decade. Also, it was possible to fabricate a printed OTFT with channel lengths down to 5 μm, and reduce the fabrication process by 20 steps compared with photolithography.

Original language	English
Pages (from-to)	487-496
Number of pages	10
Journal	Sensors and Materials
Volume	19
Issue number	8
Publication status	Published - 2007 Dec 1

Keywords

Direct printing
Microcontact printing
Organic thin-film transistor
Printed OTFT
h-PDMS stamp

ASJC Scopus subject areas

Instrumentation
Materials Science(all)

Access to Document

Fingerprint Dive into the research topics of 'Fabrication of direct-printed OTFT array using flexible h-PDMS stamp'. Together they form a unique fingerprint.

Cite this

@article{396733fdb1ba4f1ba95d7529580e220e,

title = "Fabrication of direct-printed OTFT array using flexible h-PDMS stamp",

abstract = "Printed organic thin-film transistors (OTFTs) for use as a switching device in an organic light-emitting diode (OLED) were fabricated by microcontact and direct printing at room temperature. The printed OTFT was used in the fabrication of a printed gate with source and drain electrodes (W/L = 500 μm/5 μm, 500 μm/10 μm, and 500 μm/20 μm) printed using a hard poly (dimethylsiloxane) (h-PDMS) stamp and low-viscosity Ag ink, a spin coated parylene-C gate dielectric, and a soluble poly (3-hexylthiophene-2,5-dily) (P3HT) organic semiconductor on flexible, transparent poly(ethylenenaphthalate) (PEN) plastic substrates. The printed OTFT was characterized and the following parameters were obtained: a mobility of 0.06 (±0.02) cm2/Vs, an on/off current ratio of 103, and a subthreshold slope of 2.53 V/decade. Also, it was possible to fabricate a printed OTFT with channel lengths down to 5 μm, and reduce the fabrication process by 20 steps compared with photolithography.",

keywords = "Direct printing, Microcontact printing, Organic thin-film transistor, Printed OTFT, h-PDMS stamp",

author = "Jeongdai Jo and Lee, {Taik Min} and Yu, {Jong Su} and Kim, {Chung Hwan} and Kim, {Dong Soo} and Lee, {Eung Sug} and Masayoshi Esashi",

year = "2007",

month = dec,

day = "1",

language = "English",

volume = "19",

pages = "487--496",

journal = "Sensors and Materials",

issn = "0914-4935",

publisher = "M Y U Scientific Publishing Division",

number = "8",

}

TY - JOUR

T1 - Fabrication of direct-printed OTFT array using flexible h-PDMS stamp

AU - Jo, Jeongdai

AU - Lee, Taik Min

AU - Yu, Jong Su

AU - Kim, Chung Hwan

AU - Kim, Dong Soo

AU - Lee, Eung Sug

AU - Esashi, Masayoshi

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Printed organic thin-film transistors (OTFTs) for use as a switching device in an organic light-emitting diode (OLED) were fabricated by microcontact and direct printing at room temperature. The printed OTFT was used in the fabrication of a printed gate with source and drain electrodes (W/L = 500 μm/5 μm, 500 μm/10 μm, and 500 μm/20 μm) printed using a hard poly (dimethylsiloxane) (h-PDMS) stamp and low-viscosity Ag ink, a spin coated parylene-C gate dielectric, and a soluble poly (3-hexylthiophene-2,5-dily) (P3HT) organic semiconductor on flexible, transparent poly(ethylenenaphthalate) (PEN) plastic substrates. The printed OTFT was characterized and the following parameters were obtained: a mobility of 0.06 (±0.02) cm2/Vs, an on/off current ratio of 103, and a subthreshold slope of 2.53 V/decade. Also, it was possible to fabricate a printed OTFT with channel lengths down to 5 μm, and reduce the fabrication process by 20 steps compared with photolithography.

AB - Printed organic thin-film transistors (OTFTs) for use as a switching device in an organic light-emitting diode (OLED) were fabricated by microcontact and direct printing at room temperature. The printed OTFT was used in the fabrication of a printed gate with source and drain electrodes (W/L = 500 μm/5 μm, 500 μm/10 μm, and 500 μm/20 μm) printed using a hard poly (dimethylsiloxane) (h-PDMS) stamp and low-viscosity Ag ink, a spin coated parylene-C gate dielectric, and a soluble poly (3-hexylthiophene-2,5-dily) (P3HT) organic semiconductor on flexible, transparent poly(ethylenenaphthalate) (PEN) plastic substrates. The printed OTFT was characterized and the following parameters were obtained: a mobility of 0.06 (±0.02) cm2/Vs, an on/off current ratio of 103, and a subthreshold slope of 2.53 V/decade. Also, it was possible to fabricate a printed OTFT with channel lengths down to 5 μm, and reduce the fabrication process by 20 steps compared with photolithography.

KW - Direct printing

KW - Microcontact printing

KW - Organic thin-film transistor

KW - Printed OTFT

KW - h-PDMS stamp

UR - http://www.scopus.com/inward/record.url?scp=39649113890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39649113890&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:39649113890

VL - 19

SP - 487

EP - 496

JO - Sensors and Materials

JF - Sensors and Materials

SN - 0914-4935

IS - 8

ER -