TY - GEN
T1 - Fabrication of diamond mold for imprint lithography
AU - Konoma, C.
AU - Ono, T.
AU - Miyashita, H.
AU - Kanomori, Y.
AU - Esashi, M.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - The authors propose the fabrication method for a diamond mold for imprint lithography to transfer the dot pattern onto recording media. It is expected that more high density and small dot patterns will be imprinted using the diamond mold. A diamond thin film with a thickness of about 10 μm was deposited on a Si wafer using hot-filament chemical vapor deposition (HF-CVD). The wafer with the diamond film was anodically bonded with 5 mm thick Pyrex glass via sputtered Al film as an adhesive layer. An aligned hole pattern can be successfully transferred on the diamond film by oxygen fast atom beam etching.
AB - The authors propose the fabrication method for a diamond mold for imprint lithography to transfer the dot pattern onto recording media. It is expected that more high density and small dot patterns will be imprinted using the diamond mold. A diamond thin film with a thickness of about 10 μm was deposited on a Si wafer using hot-filament chemical vapor deposition (HF-CVD). The wafer with the diamond film was anodically bonded with 5 mm thick Pyrex glass via sputtered Al film as an adhesive layer. An aligned hole pattern can be successfully transferred on the diamond film by oxygen fast atom beam etching.
UR - http://www.scopus.com/inward/record.url?scp=84960370375&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84960370375&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2002.1178595
DO - 10.1109/IMNC.2002.1178595
M3 - Conference contribution
AN - SCOPUS:84960370375
T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
SP - 164
EP - 165
BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2002
Y2 - 6 November 2002 through 8 November 2002
ER -