Abstract
Granular and platelet-shaped gallium nitride (GaN) crystals were prepared at 600-700°C and 4-7 MPa of N2 for 24-96 h by using a K-Ga melt. The granular crystals with a size of 50-80 μm were a mixture of cubic zincblende-type GaN (c-GaN) and hexagonal wurztite-type GaN (h-GaN). The ratio of c-GaN in the mixture increased with decreasing temperature and with decreasing N2 pressure. The platelet crystals obtained were h-GaN and have a size of about 1 mm. A colorless transparent grain of GaN with a size of 80 μm was characterized by cathodoluminescence (CL) spectroscopy at room temperature. A CL peak with a full width at half maximum of 76 meV was observed at 3.209 eV which agreed with the near band emission peak position reported for c-GaN thin films.
Original language | English |
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Pages (from-to) | 289-292 |
Number of pages | 4 |
Journal | Journal of the Ceramic Society of Japan |
Volume | 110 |
Issue number | 1280 |
DOIs | |
Publication status | Published - 2002 Apr |
Externally published | Yes |
Keywords
- Cathodoluminescence
- Cubic zincblende-type GaN
- Flux growth
- Growth condition
- Morphology
- Single crystal
ASJC Scopus subject areas
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry