Fabrication of Cu nanowires along atomic step edge lines on Si(1 1 1) substrates

Norio Tokuda, Hidenobu Watanabe, Daisuke Hojo, Satoshi Yamasaki, Kazushi Miki, Kikuo Yamabe

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We have succeeded in the fabrication of high-aspect-ratio (length to width) Cu nanowires along atomic step edge lines on Si(111) substrates. The fabrication procedure consisted of two wet process steps: (1) flattening of the surface roughness to an atomic level by immersing Si(111) wafers in ultralow-dissolved-oxygen water (LOW), and (2) Cu nanowire formation by immersion in LOW containing 10ppm Cu ions for 1s at room temperature. On the other hand, no Cu nanowires were formed on the Si(111) surfaces when the dissolved oxygen content was 8ppm in alkaline solution during the Cu deposition stage, even though the Si etching with OH - was enhanced. We consider that it is due to the decrease in reduced Cu atom density by the existence of the dissolved oxygen as superoxide anion radicals.

Original languageEnglish
Pages (from-to)529-532
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Oct 15


  • AFM
  • Cu
  • Electroless deposition
  • Nanowire
  • Si
  • Surface

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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