Fabrication of cosputtered Zn-In-Sn-O films and their applications to organic light-emitting diodes

Gi Seok Heo, Yuji Matsumoto, In Gi Gim, Jong Woon Park, Kwang Young Kim, Tae Won Kim

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Zn-In-Sn-O (ZITO) films have been grown by rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto glass substrate. X-ray diffraction analysis shows that the microstructure is amorphous below the substrate temperature of 250 {ring operator}C. The films exhibit sheet resistance as low as 16.7 Ω/□ and optical transparency comparable to grater than that of Sn-doped indium oxide (ITO) films. The work function ranged 5.05-5.19 eV, which is a higher work function compared to ITO (4.7 eV). The fabricated ZITO films are used in fabrication of organic light-emitting diodes (OLEDs). The ZITO anode with the zinc content of 12.5 at.% [Zn/(Zn+In+Sn)] fabricated at 250 {ring operator}C-based OLED shows lower turn-on voltage and higher current density compared to that of ITO-based control device.

Original languageEnglish
Pages (from-to)1731-1734
Number of pages4
JournalSolid State Communications
Volume149
Issue number41-42
DOIs
Publication statusPublished - 2009 Nov 1
Externally publishedYes

Keywords

  • A. TCO
  • A. Zn-In-Sn-O
  • B. RF magnetron cosputtering
  • C. Amorphous semiconductor

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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