As an application of the self-organization growth technique to the fabrication of nanoscale mechanical structures, we selectively etched a GaAs sacrificial layer under InAs wires preferentially grown on bunched steps on misoriented GaAs (110) surfaces, which led to the formation of single-crystal InAs nanoscale cantilevers. Their lengths, widths and thickness are typically 50-300, 20-100 and 10-30 nm, respectively. The structures are expected to be electrically conductive and to be promising for use in fabricating single-crystal nanoelectromechanical systems.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)