Fabrication of conductive oxide polycrystalline BaPbO3 films by chemical solution deposition and their electrical resistivity

Hiroshi Naganuma, Kayoko Yamada, Hiromi Shima, Kensuke Akiyama, Takashi Iijima, Hiroshi Funakubo, Soichiro Okamura

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


BaPbO3 films were fabricated by a chemical solution deposition on the SiO2/Si(100) and MgO(100) substrates followed by a post-deposition annealing at the temperatures between 673 and 1073 K under oxygen flow. Polycrystalline BaPbO3 films were formed together with secondary phases such as PbO and Pb3O4 onto MgO(100) substrates at around 750 K, and the films were crystallized into single phase of BaPbO3 above 823 K. Endothermic peak in differential thermal analysis due to crystallization of BaPbO3 was observed at 750 K, which is consistent with crystallization temperature of BaPbO3 estimated from X-ray diffraction. The electrical resistivity depended on the annealing temperature even in the single phase BaPbO3 films, the lowest resistivity of 3∈×∈10-6 μΩ•m which was comparable to that of bulk BaPbO3 was achieved at the annealing temperature of 873 K.

Original languageEnglish
Pages (from-to)78-81
Number of pages4
JournalJournal of Electroceramics
Issue number1-3
Publication statusPublished - 2009 Feb
Externally publishedYes


  • Chemical solution deposition
  • Electrical properties
  • MgO substrate
  • Perovskite-type BaPbO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry


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