Abstract
We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.
Original language | English |
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Article number | 8918252 |
Pages (from-to) | 27-32 |
Number of pages | 6 |
Journal | IEEE Journal of the Electron Devices Society |
Volume | 8 |
DOIs | |
Publication status | Published - 2020 |
Keywords
- Low temperature poly Si (LTPS)
- chemical solution coating
- excimer laser annealing (ELA)
- laser doping
- thin-film-transistor (TFT)
ASJC Scopus subject areas
- Biotechnology
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering