Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Kaname Imokawa; Takayuki Kurashige; Akira Suwa; Daisuke Nakamura; Taizoh Sadoh; Tetsuya Goto; Hiroshi Ikenoue

doi:10.1109/JEDS.2019.2956991

Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Kaname Imokawa, Takayuki Kurashige, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H₃PO₄ solution and Al₂O₃ sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10¹⁹ cm^-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.

Original language	English
Article number	8918252
Pages (from-to)	27-32
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	8
DOIs	https://doi.org/10.1109/JEDS.2019.2956991
Publication status	Published - 2020

Keywords

Low temperature poly Si (LTPS)
chemical solution coating
excimer laser annealing (ELA)
laser doping
thin-film-transistor (TFT)

ASJC Scopus subject areas

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/JEDS.2019.2956991

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Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating. / Imokawa, Kaname; Kurashige, Takayuki; Suwa, Akira; Nakamura, Daisuke; Sadoh, Taizoh; Goto, Tetsuya; Ikenoue, Hiroshi.

In: IEEE Journal of the Electron Devices Society, Vol. 8, 8918252, 2020, p. 27-32.

Research output: Contribution to journal › Article › peer-review

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title = "Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating",

abstract = "We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.",

keywords = "Low temperature poly Si (LTPS), chemical solution coating, excimer laser annealing (ELA), laser doping, thin-film-transistor (TFT)",

author = "Kaname Imokawa and Takayuki Kurashige and Akira Suwa and Daisuke Nakamura and Taizoh Sadoh and Tetsuya Goto and Hiroshi Ikenoue",

note = "Funding Information: This work was supported in part by Gigaphoton, Inc.",

year = "2020",

doi = "10.1109/JEDS.2019.2956991",

language = "English",

volume = "8",

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T1 - Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

AU - Imokawa, Kaname

AU - Kurashige, Takayuki

AU - Suwa, Akira

AU - Nakamura, Daisuke

AU - Sadoh, Taizoh

AU - Goto, Tetsuya

AU - Ikenoue, Hiroshi

N1 - Funding Information: This work was supported in part by Gigaphoton, Inc.

PY - 2020

Y1 - 2020

N2 - We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.

AB - We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.

KW - Low temperature poly Si (LTPS)

KW - chemical solution coating

KW - excimer laser annealing (ELA)

KW - laser doping

KW - thin-film-transistor (TFT)

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

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ER -

Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Abstract

Keywords

ASJC Scopus subject areas

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