TY - JOUR
T1 - Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating
AU - Imokawa, Kaname
AU - Kurashige, Takayuki
AU - Suwa, Akira
AU - Nakamura, Daisuke
AU - Sadoh, Taizoh
AU - Goto, Tetsuya
AU - Ikenoue, Hiroshi
N1 - Funding Information:
This work was supported in part by Gigaphoton, Inc.
Publisher Copyright:
© 2013 IEEE.
PY - 2020
Y1 - 2020
N2 - We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.
AB - We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.
KW - Low temperature poly Si (LTPS)
KW - chemical solution coating
KW - excimer laser annealing (ELA)
KW - laser doping
KW - thin-film-transistor (TFT)
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U2 - 10.1109/JEDS.2019.2956991
DO - 10.1109/JEDS.2019.2956991
M3 - Article
AN - SCOPUS:85077807486
VL - 8
SP - 27
EP - 32
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
SN - 2168-6734
M1 - 8918252
ER -