Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Kaname Imokawa, Takayuki Kurashige, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.

Original languageEnglish
Article number8918252
Pages (from-to)27-32
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume8
DOIs
Publication statusPublished - 2020

Keywords

  • Low temperature poly Si (LTPS)
  • chemical solution coating
  • excimer laser annealing (ELA)
  • laser doping
  • thin-film-transistor (TFT)

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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