良好な絶縁性を有する c 軸配向 PZT 系単結晶薄膜のSi 基板上への形成

Translated title of the contribution: Fabrication of c-Axis-oriented PZT-based monocrystalline thin film with high insulation property on Si substrate

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

This paper reports on an approach to fabricate c-axis-oriented PZT-based monocrystalline thin film with high insulation property on Si. We found that the insulation property of the PZT-based monocrystalline thin film on a buffer layer prepared via pulsed laser deposition (PLD) were relatably low. The particle-shaped debris generated in PLD perhaps led to this worse insulation property. It was also found that the insulation property can be improved by additional PZT deposition via a sol-gel process, while the c-axis orientation was decreased. Eventually, the PZT thin film on a buffer layer prepared via sputter deposition exhibited higher insulation property comparable with those of general PZT thin films. This study successfully gives a great knowledge for obtaining the electrically-reliable PZT-based monocrystalline thin film on Si.

Translated title of the contributionFabrication of c-Axis-oriented PZT-based monocrystalline thin film with high insulation property on Si substrate
Original languageJapanese
Pages (from-to)137-143
Number of pages7
JournalIEEJ Transactions on Sensors and Micromachines
Volume140
Issue number6
DOIs
Publication statusPublished - 2020 Jun 1

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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