(Bi,Pr)(Fe,Mn)O 3 (BPFM) thin films were deposited on the conductive B-doped diamond coated polycrystalline diamond substrates by chemical solution deposition method. BPFM thin films were crystallized with random orientation on the polycrystalline diamond. The BPFM/B-doped diamond layered film showed polarization vs electric field (P-E) hysteresis loops without any influences of leakage current at room temperature. The remnant polarization 2Pr and the coercive field 2E c at the maximum electric field of 1000 kV/cm were 135 μC/cm 2 and 700 kV/cm, respectively. In the range of room temperature to 130 °C, the prepared film capacitor showed saturated-loop shape in the P-E curve without influences of leakage current.
ASJC Scopus subject areas
- Physics and Astronomy(all)