Fabrication of Al thin wire by utilizing controlled accumulation of atoms due to electromigration

M. Saka, R. Nakanishi

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

A technique of fabricating metallic thin wires by utilizing effective collection of the atoms caused by electromigration, which is a phenomenon of atomic diffusion due to high current density, is presented. Atoms diffused by electron flow can be used for making metallic thin wires. To form metallic thin wire at the intended position, we used passivated Al thin film line that had a slit at the anode end of the line as a test sample. As a result of current applying, the Al thin wire of a high aspect ratio was fabricated.

Original languageEnglish
Pages (from-to)2129-2131
Number of pages3
JournalMaterials Letters
Volume60
Issue number17-18
DOIs
Publication statusPublished - 2006 Aug 1

Keywords

  • Drift
  • Electromigration
  • Nanomaterials
  • Thin films
  • Thin wire

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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