Fabrication of air-stable, high mobility N-type organic thin-film transistor with short channel length

Yoshihide Fujisaki, Yoshiki Nakajima, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Air-stable N-type Organic Thin-film transistor based on benzobis (thiadiazole) (BBT) derivative was fabricated at low-temperature process below 130°C. The fabricated short-channel TFT showed excellent air-stability and operational reliability when combined with a cross-linkable orefin-type gate insulator. By optimizing deposition temperature of the BBT derivative, we achieved high electron mobility over 0.2 cm2/Vs under ambient air condition.

Original languageEnglish
Title of host publicationSociety for Information Display - 18th International Display Workshops 2011, IDW'11
Pages1647-1648
Number of pages2
Publication statusPublished - 2011
Externally publishedYes
Event18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan
Duration: 2011 Dec 72011 Dec 9

Publication series

NameProceedings of the International Display Workshops
Volume3
ISSN (Print)1883-2490

Other

Other18th International Display Workshops 2011, IDW 2011
Country/TerritoryJapan
CityNagoya
Period11/12/711/12/9

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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