Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching

Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, Tomohiro Kubota, Takuya Ozaki, Seiji Samukawa, Yongxun Liu, Kenichi Ishii, Yuki Ishikawa, Etsuro Sugimata, Takashi Matsukawa, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A vertical ultrathin-channel (UTC) formation process using a low-energy neutral beam etching (NBE) for a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed for the first time. The NBE can perfectly eliminate the charge build-up and photon radiation damages from the plasma. By utilizing the NBE, fin-type vertical MOSFETs with damage-less smooth sidewalls were successfully fabricated. The fabricated FinFETs realized higher electron mobility than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically-flat surface utilizing by the NBE.

Original languageEnglish
Pages (from-to)L279-L281
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number8-11
DOIs
Publication statusPublished - 2006 Mar 10

Keywords

  • Damage-less
  • Double-gate MOSFET
  • Etching
  • Mobility
  • Neutral beam

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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    Endo, K., Noda, S., Masahara, M., Kubota, T., Ozaki, T., Samukawa, S., Liu, Y., Ishii, K., Ishikawa, Y., Sugimata, E., Matsukawa, T., Takashima, H., Yamauchi, H., & Suzuki, E. (2006). Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching. Japanese Journal of Applied Physics, Part 2: Letters, 45(8-11), L279-L281. https://doi.org/10.1143/JJAP.45.L279