Abstract
A method for growing the high-quality strained epitaxial heterostructure of Si/Sii-^Ge^/Si by low-pressure chemical vapor deposition (CVD) and the fabrication of Sii-aGe^-channel metal-oxide-semiconductor field-effect transistors (MOSFET’s) with a high Ge fraction layer have been investigated. It is found that lowering of the deposition temperature of the Sii-xGeæ and Si capping layers is necessary with increasing Ge fraction in order to prevent island growth of the layers. With the use of the optimized fabrication process, Si/Sii-xGeæ/Si heterostructures with flat surfaces and interfaces were realized, and a high-performance Sio.sGeo.s-channel MOSFET has been achieved with a large mobility enhancement of about 70% at 300 K and over 150% at 77 K compared with that of a MOSFET without a Sii-sGe^ channel.
Original language | English |
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Pages (from-to) | 438-441 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 32 |
Issue number | 1 S |
DOIs | |
Publication status | Published - 1993 Jan |
Externally published | Yes |
Keywords
- CVD
- GeH4
- MOSFET
- Quantum well
- Si
- Si1_xGex/heterostructure
- SiH4
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)