Fabrication of a SiGe-channel MOSFET containing high Ge fraction layer by low-pressure chemical vapor deposition

Kinya Goto, Junichi Murota, Takahiro Maeda, Reiner Schuetz, Kiyohito Aizawa, Roland Kircher, Kuniyoshi Yokoo, Shoichi Ono

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

A method for growing the high quality strained epitaxial heterostructure as well as the fabrication of Si1-xGex-channel pMOSFET containing a high Ge fraction layer have been investigated. It is found that lowering deposition temperature of the Si1-xGex and Si capping layers is necessary with increasing Ge fraction in order to prevent an island growth of the heterostructure. Using optimized Si/Si1-xGex/Si heterostructures with flat surfaces and interfaces, high performance Si0.5Ge0.5-channel pMOSFET has been achieved with the large mobility enhancement of about 70% at 300K and over 150% at 77K compared with those of MOSFET without Si1-xGex-channel.

Original languageEnglish
Pages449-451
Number of pages3
Publication statusPublished - 1992 Dec 1
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Goto, K., Murota, J., Maeda, T., Schuetz, R., Aizawa, K., Kircher, R., Yokoo, K., & Ono, S. (1992). Fabrication of a SiGe-channel MOSFET containing high Ge fraction layer by low-pressure chemical vapor deposition. 449-451. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .