A method for growing the high quality strained epitaxial heterostructure as well as the fabrication of Si1-xGex-channel pMOSFET containing a high Ge fraction layer have been investigated. It is found that lowering deposition temperature of the Si1-xGex and Si capping layers is necessary with increasing Ge fraction in order to prevent an island growth of the heterostructure. Using optimized Si/Si1-xGex/Si heterostructures with flat surfaces and interfaces, high performance Si0.5Ge0.5-channel pMOSFET has been achieved with the large mobility enhancement of about 70% at 300K and over 150% at 77K compared with those of MOSFET without Si1-xGex-channel.
|Number of pages||3|
|Publication status||Published - 1992 Dec 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas