TY - JOUR
T1 - Fabrication of a Si scanning probe microscopy tip with an ultrahigh vacuum-scanning tunneling microscope/atomic force microscope
AU - Ono, Takahito
AU - Saitoh, Hiroaki
AU - Esashi, Masayoshi
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1997
Y1 - 1997
N2 - Fabrication techniques for a sharp Si tip on a cantilever have been developed by using an ultrahigh vacuum-scanning tunneling microscope/atomic force microscope. The Si tip growth was performed by applying a voltage at a constant current between a Si substrate and the cantilever. It is considered that Si atoms were field evaporated on the substrate, and deposited onto the cantilever with this procedure. The sharp Si tip was successfully grown when a 3000 A gold coated cantilever was used, and not grown when the gold film was absent. The cantilever that formed the tip may have applications in scanning probe microscopy.
AB - Fabrication techniques for a sharp Si tip on a cantilever have been developed by using an ultrahigh vacuum-scanning tunneling microscope/atomic force microscope. The Si tip growth was performed by applying a voltage at a constant current between a Si substrate and the cantilever. It is considered that Si atoms were field evaporated on the substrate, and deposited onto the cantilever with this procedure. The sharp Si tip was successfully grown when a 3000 A gold coated cantilever was used, and not grown when the gold film was absent. The cantilever that formed the tip may have applications in scanning probe microscopy.
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U2 - 10.1116/1.589489
DO - 10.1116/1.589489
M3 - Article
AN - SCOPUS:5844320293
SN - 1071-1023
VL - 15
SP - 1531
EP - 1534
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 4
ER -