Abstract
Nonvolatile logic-in-memory architecture, where nonvolatile memory elements are distributed over a logic-circuit plane, is expected to realize both ultra-low-power and reduced interconnection delay. We have fabricated a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions (MTJs) in combination with metal oxide semiconductor (MOS) transistors. Magnesium oxide (MgO) barrier MTJs are used to take advantage of their high tunnel magneto-resistance (TMR) ratio and spin-injection write capability. The MOS transistors are fabricated using a 0.18 μm complementary metal oxide semiconductor (CMOS) process. The basic operation of the full adder is confirmed.
Original language | English |
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Pages (from-to) | 913011-913013 |
Number of pages | 3 |
Journal | Applied Physics Express |
Volume | 1 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2008 Sep |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)