Fabrication of a MTJ-based multilevel resistor towards process-variaton-resilient logic LSI

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A nonvolatile multilevel resistor cell based on magnetic tunnel junction (MTJ) device is proposed for process-variation-resilient logic LSIs. The proposed cell is designed by the series-parallel connection of several 'unit' MTJ devices, and its resistance value can be changed by using only one write path. Its basic behavior is simulated by using a SPICE simulator with built-in MTJ device model. The measurement result of a fabricated TEG circuit is also demonstrated.

Original languageEnglish
Title of host publication2014 IEEE 12th International New Circuits and Systems Conference, NEWCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages468-471
Number of pages4
ISBN (Electronic)9781479948857
DOIs
Publication statusPublished - 2014 Oct 22
Event2014 12th IEEE International New Circuits and Systems Conference, NEWCAS 2014 - Trois-Rivieres, Canada
Duration: 2014 Jun 222014 Jun 25

Publication series

Name2014 IEEE 12th International New Circuits and Systems Conference, NEWCAS 2014

Other

Other2014 12th IEEE International New Circuits and Systems Conference, NEWCAS 2014
CountryCanada
CityTrois-Rivieres
Period14/6/2214/6/25

Keywords

  • Beyond CMOS
  • Logic circuit
  • Magnetic tunnel junction device
  • Post-process variation compensation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Computer Networks and Communications
  • Software

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