Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties

Y. Hirayama, S. Tarucha, Y. Suzuki, H. Okamoto

Research output: Contribution to journalArticlepeer-review

88 Citations (Scopus)

Abstract

A quantum-well wire was fabricated with use of local intermixing of a GaAs-AlxGa1-xAs single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.

Original languageEnglish
Pages (from-to)2774-2777
Number of pages4
JournalPhysical Review B
Volume37
Issue number5
DOIs
Publication statusPublished - 1988 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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