Fabrication of a GaAs microwave probe used for atomic force microscope

Yang Ju, Tetsuya Kobayashi, Hitoshi Soyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.

Original languageEnglish
Title of host publication2007 Proceedings of the ASME InterPack Conference, IPACK 2007
Pages963-966
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventASME Electronic and Photonics Packaging Division - Vancouver, BC, United States
Duration: 2007 Jul 82007 Jul 12

Publication series

Name2007 Proceedings of the ASME InterPack Conference, IPACK 2007
Volume1

Other

OtherASME Electronic and Photonics Packaging Division
CountryUnited States
CityVancouver, BC
Period07/7/807/7/12

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Information Systems

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  • Cite this

    Ju, Y., Kobayashi, T., & Soyama, H. (2007). Fabrication of a GaAs microwave probe used for atomic force microscope. In 2007 Proceedings of the ASME InterPack Conference, IPACK 2007 (pp. 963-966). (2007 Proceedings of the ASME InterPack Conference, IPACK 2007; Vol. 1). https://doi.org/10.1115/IPACK2007-33613