Abstract
In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.
| Original language | English |
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| Title of host publication | 2007 Proceedings of the ASME InterPack Conference, IPACK 2007 |
| Pages | 963-966 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
| Event | ASME Electronic and Photonics Packaging Division - Vancouver, BC, United States Duration: 2007 Jul 8 → 2007 Jul 12 |
Publication series
| Name | 2007 Proceedings of the ASME InterPack Conference, IPACK 2007 |
|---|---|
| Volume | 1 |
Other
| Other | ASME Electronic and Photonics Packaging Division |
|---|---|
| Country | United States |
| City | Vancouver, BC |
| Period | 07/7/8 → 07/7/12 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Computer Science Applications
- Information Systems
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Cite this
Ju, Y., Kobayashi, T., & Soyama, H. (2007). Fabrication of a GaAs microwave probe used for atomic force microscope. In 2007 Proceedings of the ASME InterPack Conference, IPACK 2007 (pp. 963-966). (2007 Proceedings of the ASME InterPack Conference, IPACK 2007; Vol. 1). https://doi.org/10.1115/IPACK2007-33613