TY - GEN
T1 - Fabrication of a GaAs microwave probe used for atomic force microscope
AU - Ju, Yang
AU - Kobayashi, Tetsuya
AU - Soyama, Hitoshi
PY - 2007/12/1
Y1 - 2007/12/1
N2 - In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.
AB - In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.
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U2 - 10.1115/IPACK2007-33613
DO - 10.1115/IPACK2007-33613
M3 - Conference contribution
AN - SCOPUS:40449106574
SN - 0791842770
SN - 9780791842775
T3 - 2007 Proceedings of the ASME InterPack Conference, IPACK 2007
SP - 963
EP - 966
BT - 2007 Proceedings of the ASME InterPack Conference, IPACK 2007
T2 - ASME Electronic and Photonics Packaging Division
Y2 - 8 July 2007 through 12 July 2007
ER -