Fabrication of a GaAs microwave probe used for atomic force microscope

Yang Ju; Tetsuya Kobayashi; Hitoshi Soyama

doi:10.1115/IPACK2007-33613

Fabrication of a GaAs microwave probe used for atomic force microscope

Yang Ju, Tetsuya Kobayashi, Hitoshi Soyama

ENG - Finemechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.

Original language	English
Title of host publication	2007 Proceedings of the ASME InterPack Conference, IPACK 2007
Pages	963-966
Number of pages	4
DOIs	https://doi.org/10.1115/IPACK2007-33613
Publication status	Published - 2007 Dec 1
Event	ASME Electronic and Photonics Packaging Division - Vancouver, BC, United States Duration: 2007 Jul 8 → 2007 Jul 12

Publication series

Name	2007 Proceedings of the ASME InterPack Conference, IPACK 2007
Volume	1

Other

Other	ASME Electronic and Photonics Packaging Division
Country	United States
City	Vancouver, BC
Period	07/7/8 → 07/7/12

ASJC Scopus subject areas

Computer Networks and Communications
Computer Science Applications
Information Systems

Access to Document

10.1115/IPACK2007-33613

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Ju, Y, Kobayashi, T & Soyama, H 2007, Fabrication of a GaAs microwave probe used for atomic force microscope. in 2007 Proceedings of the ASME InterPack Conference, IPACK 2007. 2007 Proceedings of the ASME InterPack Conference, IPACK 2007, vol. 1, pp. 963-966, ASME Electronic and Photonics Packaging Division, Vancouver, BC, United States, 07/7/8. https://doi.org/10.1115/IPACK2007-33613

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abstract = "In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.",

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