Fabrication of a field effect transistor structure using charge-ordered organic materials α-(BEDT-TTF)2I3 and α′-(BEDT-TTF)2IBr2

M. Kimata, T. Ishihara, A. Ueda, H. Mori, H. Tajima

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The effect of electrostatic charge carrier injection into the charge-ordered (CO) organic materials [α-(BEDT-TTF)2I 3 and α′-(BEDT-TTF)2IBr2] using a field effect transistor (FET) structure is investigated. Depending on the devices, both n-type and p-type behaviors are observed. Our results reveal that only the hole transfer property is strongly affected by the interface conditions of the devices. In addition, our devices presently show relatively low gate response compared to the recently reported organic Mott FET. This result suggests that a gate-induced drastic change of electronic state, which is proposed in the organic Mott FET, is not observed in the present CO FET.

Original languageEnglish
Pages (from-to)43-45
Number of pages3
JournalSynthetic Metals
Volume173
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • BEDT-TTF
  • Charge order
  • Electrostatic charge carrier injection
  • Field effect transistor
  • Organic conductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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