Abstract
For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.
Original language | English |
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Pages (from-to) | 1930-1932 |
Number of pages | 3 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 40 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2008 Apr 1 |
Keywords
- ALD
- InGaAs
- MOS
- Quantum dot
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics