Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

Tomohiro Kita; D. Chiba; Y. Ohno; Hideo Ohno

doi:10.1016/j.physe.2007.08.140

Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

Tomohiro Kita, D. Chiba, Y. Ohno, Hideo Ohno

Research output: Contribution to journal › Article › peer-review

Abstract

For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In_0.56Ga_0.44As resonant tunneling diode structure with an Al₂O₃ gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

Original language	English
Pages (from-to)	1930-1932
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	6
DOIs	https://doi.org/10.1016/j.physe.2007.08.140
Publication status	Published - 2008 Apr 1

Keywords

ALD
InGaAs
MOS
Quantum dot

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.physe.2007.08.140

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title = "Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator",

abstract = "For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.",

keywords = "ALD, InGaAs, MOS, Quantum dot",

author = "Tomohiro Kita and D. Chiba and Y. Ohno and Hideo Ohno",

year = "2008",

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doi = "10.1016/j.physe.2007.08.140",

language = "English",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

AU - Kita, Tomohiro

AU - Chiba, D.

AU - Ohno, Y.

AU - Ohno, Hideo

PY - 2008/4/1

Y1 - 2008/4/1

N2 - For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

AB - For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

KW - ALD

KW - InGaAs

KW - MOS

KW - Quantum dot

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SP - 1930

EP - 1932

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 6

ER -

Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

Abstract

Keywords

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