For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.
|Number of pages||3|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2008 Apr 1|
- Quantum dot
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics