TY - JOUR
T1 - Fabrication of a bonded LNOI waveguide structure on Si substrate using ultra-precision cutting
AU - Takigawa, Ryo
AU - Kamimura, Keigo
AU - Asami, Kenta
AU - Nakamoto, Keiichi
AU - Tomimatsu, Toru
AU - Asano, Tanemasa
PY - 2020/2/1
Y1 - 2020/2/1
N2 - The heterogeneous integration of an LNOI waveguide device on a mature Si platform is interesting for the creation of a future high density and multi-functional platform. This paper reports the fabrication of a bent LNOI waveguide on Si substrate using surface activated bonding with a Si nanoadhesive layer and post-bond ultra-precision cutting at room temperature. This bonding method demonstrates the sufficient bond strength between an LN wafer and thermally grown SiO2 to withstand ductile-mode cutting for waveguide fabrication. In this work, the width, height, and bent radius of the ridged LNOI waveguide on Si substrate were approximately 5, 2.5, and 300 μm, respectively. These room-temperature bonding and cutting methods are expected to fabricate various heterogenous devices with a large coefficient of thermal expansion mismatch between dissimilar materials, not just LNOI/Si waveguide devices.
AB - The heterogeneous integration of an LNOI waveguide device on a mature Si platform is interesting for the creation of a future high density and multi-functional platform. This paper reports the fabrication of a bent LNOI waveguide on Si substrate using surface activated bonding with a Si nanoadhesive layer and post-bond ultra-precision cutting at room temperature. This bonding method demonstrates the sufficient bond strength between an LN wafer and thermally grown SiO2 to withstand ductile-mode cutting for waveguide fabrication. In this work, the width, height, and bent radius of the ridged LNOI waveguide on Si substrate were approximately 5, 2.5, and 300 μm, respectively. These room-temperature bonding and cutting methods are expected to fabricate various heterogenous devices with a large coefficient of thermal expansion mismatch between dissimilar materials, not just LNOI/Si waveguide devices.
UR - http://www.scopus.com/inward/record.url?scp=85081975724&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85081975724&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/ab514e
DO - 10.7567/1347-4065/ab514e
M3 - Article
AN - SCOPUS:85081975724
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SB
M1 - SBBD03
ER -