Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure

Daisuke Suzuki; M. Natsui; Akira Mochizuki; S. Miura; H. Honjo; Hideo Sato; S. Fukami; S. Ikeda; T. Endoh; H. Ohno; T. Hanyu

doi:10.1109/VLSIC.2015.7231371

Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure

Daisuke Suzuki, M. Natsui, Akira Mochizuki, S. Miura, H. Honjo, Hideo Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno, T. Hanyu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

19 Citations (Scopus)

Abstract

A nonvolatile FPGA (NVFPGA) test chip, where 3000 6-input lookup table (LUT) circuits are embedded, is fabricated under 90nm CMOS/75nm perpendicular magnetic tunnel junction (p-MTJ) technologies. The use of a p-MTJ device makes data-backup-limitation free, which essentially eliminates damage control to nonvolatile storage devices. The use of a p-MTJ device also enables the extension towards dynamically reconfigurable logic paradigm. Since hardware components are shared among all the p-MTJ devices by the use of logic-in-memory structure, the effective area of the 6-input LUT circuit is reduced by 56% compared to that of an SRAM-based one. Moreover, block-level power gating, in which all the idle function blocks are optimally turned off in accordance with the operation mode, can minimize static power consumption of each tile. As a result, the total average power of the proposed NVFPGA is reduced by 81% in comparison with that of an SRAM-based FPGA under typical benchmark-circuit realizations.

Original language	English
Title of host publication	2015 Symposium on VLSI Circuits, VLSI Circuits 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	C172-C173
ISBN (Electronic)	9784863485020
DOIs	https://doi.org/10.1109/VLSIC.2015.7231371
Publication status	Published - 2015 Aug 31
Event	29th Annual Symposium on VLSI Circuits, VLSI Circuits 2015 - Kyoto, Japan Duration: 2015 Jun 17 → 2015 Jun 19

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume	2015-August

Other

Other	29th Annual Symposium on VLSI Circuits, VLSI Circuits 2015
Country/Territory	Japan
City	Kyoto
Period	15/6/17 → 15/6/19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/VLSIC.2015.7231371

Cite this

Suzuki, D., Natsui, M., Mochizuki, A., Miura, S., Honjo, H., Sato, H., Fukami, S., Ikeda, S., Endoh, T., Ohno, H., & Hanyu, T. (2015). Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure. In 2015 Symposium on VLSI Circuits, VLSI Circuits 2015 (pp. C172-C173). [7231371] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIC.2015.7231371

Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure. / Suzuki, Daisuke; Natsui, M.; Mochizuki, Akira et al.

2015 Symposium on VLSI Circuits, VLSI Circuits 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. C172-C173 7231371 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suzuki, D, Natsui, M, Mochizuki, A, Miura, S , Honjo, H, Sato, H, Fukami, S , Ikeda, S , Endoh, T , Ohno, H & Hanyu, T 2015, Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure. in 2015 Symposium on VLSI Circuits, VLSI Circuits 2015., 7231371, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. C172-C173, 29th Annual Symposium on VLSI Circuits, VLSI Circuits 2015, Kyoto, Japan, 15/6/17. https://doi.org/10.1109/VLSIC.2015.7231371

Suzuki D, Natsui M, Mochizuki A, Miura S , Honjo H, Sato H et al. Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure. In 2015 Symposium on VLSI Circuits, VLSI Circuits 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. C172-C173. 7231371. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). doi: 10.1109/VLSIC.2015.7231371

Suzuki, Daisuke ; Natsui, M. ; Mochizuki, Akira et al. / Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure. 2015 Symposium on VLSI Circuits, VLSI Circuits 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. C172-C173 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

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abstract = "A nonvolatile FPGA (NVFPGA) test chip, where 3000 6-input lookup table (LUT) circuits are embedded, is fabricated under 90nm CMOS/75nm perpendicular magnetic tunnel junction (p-MTJ) technologies. The use of a p-MTJ device makes data-backup-limitation free, which essentially eliminates damage control to nonvolatile storage devices. The use of a p-MTJ device also enables the extension towards dynamically reconfigurable logic paradigm. Since hardware components are shared among all the p-MTJ devices by the use of logic-in-memory structure, the effective area of the 6-input LUT circuit is reduced by 56% compared to that of an SRAM-based one. Moreover, block-level power gating, in which all the idle function blocks are optimally turned off in accordance with the operation mode, can minimize static power consumption of each tile. As a result, the total average power of the proposed NVFPGA is reduced by 81% in comparison with that of an SRAM-based FPGA under typical benchmark-circuit realizations.",

author = "Daisuke Suzuki and M. Natsui and Akira Mochizuki and S. Miura and H. Honjo and Hideo Sato and S. Fukami and S. Ikeda and T. Endoh and H. Ohno and T. Hanyu",

note = "Funding Information: This research was supported by JSPS through FIRST Program, CIES by METI. ImPACT of CSTI, and ACCEL under JST. This research was also supported by VDEC. The authors thank Y. Takako and A. Tamakoshi of Focal Agency. Publisher Copyright: {\textcopyright} 2015 JSAP.; 29th Annual Symposium on VLSI Circuits, VLSI Circuits 2015 ; Conference date: 17-06-2015 Through 19-06-2015",

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N2 - A nonvolatile FPGA (NVFPGA) test chip, where 3000 6-input lookup table (LUT) circuits are embedded, is fabricated under 90nm CMOS/75nm perpendicular magnetic tunnel junction (p-MTJ) technologies. The use of a p-MTJ device makes data-backup-limitation free, which essentially eliminates damage control to nonvolatile storage devices. The use of a p-MTJ device also enables the extension towards dynamically reconfigurable logic paradigm. Since hardware components are shared among all the p-MTJ devices by the use of logic-in-memory structure, the effective area of the 6-input LUT circuit is reduced by 56% compared to that of an SRAM-based one. Moreover, block-level power gating, in which all the idle function blocks are optimally turned off in accordance with the operation mode, can minimize static power consumption of each tile. As a result, the total average power of the proposed NVFPGA is reduced by 81% in comparison with that of an SRAM-based FPGA under typical benchmark-circuit realizations.

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Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure

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