Fabrication of 40 nm-gate MOSFETs by nano-electron beam direct writing

Yukinori Ochiai, Shoko Manako, Seiji Samukawa, Jun Ichi Fujita, Kiyoshi Takeuchi, Toyoji Yamamoto

Research output: Contribution to journalArticlepeer-review

Abstract

A nanometer electron beam lithography system has been developed and used for fabricating sub-0.1(im gate MOSFETs. The system uses a Zr/O/W thermal field emitter (TFE) and has a 5-nm- diameter beam at a current of 100 pA, and an acceleration voltage of 50 kV. A 10-nm line in PMMA resist on a thick Si substrate was demonstrated. We develop an inorganic resist, LixAl1-xF, which shows a potential for high resolution lithography less than 10 run. A chemically amplified negative resist was used as a single layer mask for MOS FET gate fabrication, and showed high resolution less than 0.1 μm width. Proximity effect correction was applied to the gate lithography, resulting in excellent line width control even less than 0.1 (im. Operation of a 40-nm-poly-silicon gate NMOSFET was confirmed. :c!996TAPJ.

Original languageEnglish
Pages (from-to)715-722
Number of pages8
JournalJournal of Photopolymer Science and Technology
Volume9
Issue number4
DOIs
Publication statusPublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Fabrication of 40 nm-gate MOSFETs by nano-electron beam direct writing'. Together they form a unique fingerprint.

Cite this