TY - JOUR
T1 - Fabrication of 40 nm-gate MOSFETs by nano-electron beam direct writing
AU - Ochiai, Yukinori
AU - Manako, Shoko
AU - Samukawa, Seiji
AU - Fujita, Jun Ichi
AU - Takeuchi, Kiyoshi
AU - Yamamoto, Toyoji
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1996
Y1 - 1996
N2 - A nanometer electron beam lithography system has been developed and used for fabricating sub-0.1(im gate MOSFETs. The system uses a Zr/O/W thermal field emitter (TFE) and has a 5-nm- diameter beam at a current of 100 pA, and an acceleration voltage of 50 kV. A 10-nm line in PMMA resist on a thick Si substrate was demonstrated. We develop an inorganic resist, LixAl1-xF, which shows a potential for high resolution lithography less than 10 run. A chemically amplified negative resist was used as a single layer mask for MOS FET gate fabrication, and showed high resolution less than 0.1 μm width. Proximity effect correction was applied to the gate lithography, resulting in excellent line width control even less than 0.1 (im. Operation of a 40-nm-poly-silicon gate NMOSFET was confirmed. :c!996TAPJ.
AB - A nanometer electron beam lithography system has been developed and used for fabricating sub-0.1(im gate MOSFETs. The system uses a Zr/O/W thermal field emitter (TFE) and has a 5-nm- diameter beam at a current of 100 pA, and an acceleration voltage of 50 kV. A 10-nm line in PMMA resist on a thick Si substrate was demonstrated. We develop an inorganic resist, LixAl1-xF, which shows a potential for high resolution lithography less than 10 run. A chemically amplified negative resist was used as a single layer mask for MOS FET gate fabrication, and showed high resolution less than 0.1 μm width. Proximity effect correction was applied to the gate lithography, resulting in excellent line width control even less than 0.1 (im. Operation of a 40-nm-poly-silicon gate NMOSFET was confirmed. :c!996TAPJ.
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U2 - 10.2494/photopolymer.9.715
DO - 10.2494/photopolymer.9.715
M3 - Article
AN - SCOPUS:33749293482
VL - 9
SP - 715
EP - 722
JO - Journal of Photopolymer Science and Technology
JF - Journal of Photopolymer Science and Technology
SN - 0914-9244
IS - 4
ER -