Fabrication of 3D quantum dot array by fusion of biotemplate and neutral beam etching II: Application to QD solar cells and laser/LED

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We investigated the controllable range of bandgap energy, Egand optical absorption characteristic of silicon quantum nanodisks (QNDs) formed by a top-down method described in previous chapter, which enables precise control of geometrical parameters. By embedding by Silicon Carbides, the wave function of the QNDs overlaps each other, and a wide miniband was formed, which enhance only the photon absorption but carrier transport in the stacked QNDs. The high optical absorption and conductivity properties were verified by fabricating p-i-n solar cells with Si-NDs, and efficient carrier generation and high electrical conductivity in our Si-ND structure were surely clarified. The top-down process was also applied to form quantum dots photonic devices based on III-V compound semiconductors. We fabricated GaAs nanodisks (NDs) with a diameter of sub-20 nm. The GaAs NDs were embedded with AlGaAs regrown by metal organic vapor phase epitaxy. Light emitting diodes were fabricated using the NDs, exhibiting a narrow spectral width of 38 nm with high-intensity as a result of small size deviation of NDs and superior quality of GaAs/AlGaAs surface formed by neutral beam etching.

Original languageEnglish
Title of host publicationIntelligent Nanosystems for Energy, Information and Biological Technologies
PublisherSpringer Japan
Pages169-192
Number of pages24
ISBN (Electronic)9784431564294
ISBN (Print)9784431564270
DOIs
Publication statusPublished - 2016 Jan 1

Keywords

  • GaAs
  • LED
  • MOVPE
  • Neutral beam etching
  • Photoluminescence
  • Quantum nanodisk

ASJC Scopus subject areas

  • Engineering(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Medicine(all)
  • Neuroscience(all)

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